APA (7th ed.) Citation

Yeong, T. N. (2005). Design Of 1K Asynchronous Static Random Access Memory Using 0.35 Micron Complementary Metal Oxide Semiconductor Technology.

Chicago Style (17th ed.) Citation

Yeong, Tak Nging. Design Of 1K Asynchronous Static Random Access Memory Using 0.35 Micron Complementary Metal Oxide Semiconductor Technology. 2005.

MLA (9th ed.) Citation

Yeong, Tak Nging. Design Of 1K Asynchronous Static Random Access Memory Using 0.35 Micron Complementary Metal Oxide Semiconductor Technology. 2005.

Warning: These citations may not always be 100% accurate.