Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique
In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption,energy gap, carrier transport and therma...
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| Format: | Article |
| Language: | English English |
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Elsevier
2008
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| Online Access: | http://psasir.upm.edu.my/id/eprint/6025/ http://psasir.upm.edu.my/id/eprint/6025/1/Characterization%20of%20thermal.pdf |
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| author | Chan, Kok Sheng Mat Yunus, W. Mahmood Wan Yunus, Wan Md Zin Talib, Zainal Abidin Kassim, Anuar |
| author_facet | Chan, Kok Sheng Mat Yunus, W. Mahmood Wan Yunus, Wan Md Zin Talib, Zainal Abidin Kassim, Anuar |
| author_sort | Chan, Kok Sheng |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption,energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50–76%) of the studies, our results found that the optical band-gap
energy of p-type porous silicon (1.80–2.00 eV) was higher than that of the n-type porous silicon layer (1.70–1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity. |
| first_indexed | 2025-11-15T07:24:33Z |
| format | Article |
| id | upm-6025 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-15T07:24:33Z |
| publishDate | 2008 |
| publisher | Elsevier |
| recordtype | eprints |
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| spelling | upm-60252015-11-23T07:07:36Z http://psasir.upm.edu.my/id/eprint/6025/ Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique Chan, Kok Sheng Mat Yunus, W. Mahmood Wan Yunus, Wan Md Zin Talib, Zainal Abidin Kassim, Anuar In this work, the porous silicon layer was prepared by the electrochemical anodization etching process on n-type and p-type silicon wafers. The formation of the porous layer has been identified by photoluminescence and SEM measurements. The optical absorption,energy gap, carrier transport and thermal properties of n-type and p-type porous silicon layers were investigated by analyzing the experimental data from photoacoustic measurements. The values of thermal diffusivity, energy gap and carrier transport properties have been found to be porosity-dependent. The energy band gap of n-type and p-type porous silicon layers was higher than the energy band gap obtained for silicon substrate (1.11 eV). In the range of porosity (50–76%) of the studies, our results found that the optical band-gap energy of p-type porous silicon (1.80–2.00 eV) was higher than that of the n-type porous silicon layer (1.70–1.86 eV). The thermal diffusivity value of the n-type porous layer was found to be higher than that of the p-type and both were observed to increase linearly with increasing layer porosity. Elsevier 2008 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/6025/1/Characterization%20of%20thermal.pdf Chan, Kok Sheng and Mat Yunus, W. Mahmood and Wan Yunus, Wan Md Zin and Talib, Zainal Abidin and Kassim, Anuar (2008) Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique. Physica B, 403 (17). pp. 2634-2638. ISSN 0921-4526 http://dx.doi.org/10.1016/j.physb.2008.01.029 10.1016/j.physb.2008.01.029 English |
| spellingShingle | Chan, Kok Sheng Mat Yunus, W. Mahmood Wan Yunus, Wan Md Zin Talib, Zainal Abidin Kassim, Anuar Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique |
| title | Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique |
| title_full | Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique |
| title_fullStr | Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique |
| title_full_unstemmed | Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique |
| title_short | Characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique |
| title_sort | characterization of thermal, optical and carrier transport properties of porous silicon using the photoacoustic technique |
| url | http://psasir.upm.edu.my/id/eprint/6025/ http://psasir.upm.edu.my/id/eprint/6025/ http://psasir.upm.edu.my/id/eprint/6025/ http://psasir.upm.edu.my/id/eprint/6025/1/Characterization%20of%20thermal.pdf |