Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics
It is necessary to investigate the electronic states of ceramic based ZnO vasristor and effect of doped impurities at different concentration. Band gap (Eg) of the ceramic (99-x) mol% ZnO+0.5 mol% Bi2O3+0.5 mol% TiO2+ xCo3O4 where x = 0, 0.2, 0.4, 0.6 and 0.8 mol%, were determined using UV-Vis spect...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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AIP Publishing
2017
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| Online Access: | http://psasir.upm.edu.my/id/eprint/57619/ http://psasir.upm.edu.my/id/eprint/57619/1/Effect%20of%20Co3O4%20doping%20and%20sintering%20temperature%20on%20optical%20energy%20band%20gap%20properties%20in%20Zn-Bi-Ti-O%20varistor%20ceramics.pdf |
| _version_ | 1848853417041068032 |
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| author | Mohd Ghazali, Mohd Sabri Wan Abdullah, Wan Rafizah Zakaria, Azmi Zulkifli, Muhamad Azman Mohd Zaid, Mohd Hafiz Rizwan, Zahid |
| author_facet | Mohd Ghazali, Mohd Sabri Wan Abdullah, Wan Rafizah Zakaria, Azmi Zulkifli, Muhamad Azman Mohd Zaid, Mohd Hafiz Rizwan, Zahid |
| author_sort | Mohd Ghazali, Mohd Sabri |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | It is necessary to investigate the electronic states of ceramic based ZnO vasristor and effect of doped impurities at different concentration. Band gap (Eg) of the ceramic (99-x) mol% ZnO+0.5 mol% Bi2O3+0.5 mol% TiO2+ xCo3O4 where x = 0, 0.2, 0.4, 0.6 and 0.8 mol%, were determined using UV-Vis spectrophotometer. The samples were prepared via solid-state route and sintered at the sintering temperature at 1110, 1140 and 1170 °C for 45 and 90 min in open air. At no doping of Co3O4, the values of Eg are 2.991 ± 0.001, 2.989 ± 0.001 eV for 45 and 90 min sintering time; respectively. Eg was decreased to 2.368 ± 0.002 and 2.352 ± 0.001 eV at 0.8 mol% Co3O4 for 45 and 90 min sintering time; respectively. XRD analysis indicates that two main phases existed at all concentrations which are ZnO and secondary phases, Bi12TiO20, Zn2Ti3O8, ZnCo2O4 and Co3Ti3O. Relative density decreases with the addition of Co3O4 compared to that of undoped at all doping level. When Co3O4 is added in the ceramics, relative density increases with the increase of doping level at both 45 and 90 min sintering time. The variation of sintering temperatures and XRD findings of steepness factor are correlated with the UV-Vis spectrophotometer results of based ZnO varistor doped with Co3O4 due to the growth of interface states. |
| first_indexed | 2025-11-15T10:53:38Z |
| format | Conference or Workshop Item |
| id | upm-57619 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T10:53:38Z |
| publishDate | 2017 |
| publisher | AIP Publishing |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-576192017-10-24T07:54:12Z http://psasir.upm.edu.my/id/eprint/57619/ Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics Mohd Ghazali, Mohd Sabri Wan Abdullah, Wan Rafizah Zakaria, Azmi Zulkifli, Muhamad Azman Mohd Zaid, Mohd Hafiz Rizwan, Zahid It is necessary to investigate the electronic states of ceramic based ZnO vasristor and effect of doped impurities at different concentration. Band gap (Eg) of the ceramic (99-x) mol% ZnO+0.5 mol% Bi2O3+0.5 mol% TiO2+ xCo3O4 where x = 0, 0.2, 0.4, 0.6 and 0.8 mol%, were determined using UV-Vis spectrophotometer. The samples were prepared via solid-state route and sintered at the sintering temperature at 1110, 1140 and 1170 °C for 45 and 90 min in open air. At no doping of Co3O4, the values of Eg are 2.991 ± 0.001, 2.989 ± 0.001 eV for 45 and 90 min sintering time; respectively. Eg was decreased to 2.368 ± 0.002 and 2.352 ± 0.001 eV at 0.8 mol% Co3O4 for 45 and 90 min sintering time; respectively. XRD analysis indicates that two main phases existed at all concentrations which are ZnO and secondary phases, Bi12TiO20, Zn2Ti3O8, ZnCo2O4 and Co3Ti3O. Relative density decreases with the addition of Co3O4 compared to that of undoped at all doping level. When Co3O4 is added in the ceramics, relative density increases with the increase of doping level at both 45 and 90 min sintering time. The variation of sintering temperatures and XRD findings of steepness factor are correlated with the UV-Vis spectrophotometer results of based ZnO varistor doped with Co3O4 due to the growth of interface states. AIP Publishing 2017 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/57619/1/Effect%20of%20Co3O4%20doping%20and%20sintering%20temperature%20on%20optical%20energy%20band%20gap%20properties%20in%20Zn-Bi-Ti-O%20varistor%20ceramics.pdf Mohd Ghazali, Mohd Sabri and Wan Abdullah, Wan Rafizah and Zakaria, Azmi and Zulkifli, Muhamad Azman and Mohd Zaid, Mohd Hafiz and Rizwan, Zahid (2017) Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics. In: 3rd Electronic and Green Materials International Conference 2017 (EGM 2017), 29-30 Apr. 2017, Krabi, Thailand. (pp. 1-8). 10.1063/1.5002318 |
| spellingShingle | Mohd Ghazali, Mohd Sabri Wan Abdullah, Wan Rafizah Zakaria, Azmi Zulkifli, Muhamad Azman Mohd Zaid, Mohd Hafiz Rizwan, Zahid Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics |
| title | Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics |
| title_full | Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics |
| title_fullStr | Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics |
| title_full_unstemmed | Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics |
| title_short | Effect of Co3O4 doping and sintering temperature on optical energy band gap properties in Zn-Bi-Ti-O varistor ceramics |
| title_sort | effect of co3o4 doping and sintering temperature on optical energy band gap properties in zn-bi-ti-o varistor ceramics |
| url | http://psasir.upm.edu.my/id/eprint/57619/ http://psasir.upm.edu.my/id/eprint/57619/ http://psasir.upm.edu.my/id/eprint/57619/1/Effect%20of%20Co3O4%20doping%20and%20sintering%20temperature%20on%20optical%20energy%20band%20gap%20properties%20in%20Zn-Bi-Ti-O%20varistor%20ceramics.pdf |