Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications

A top-down nanofabrication approach is used to develop silicon nanowires from silicon-oninsulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the cruci...

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Main Authors: Md Nor, Mohammad Nuzaihan, Hashim, Uda, Md Arshad, Mohd Khairuddin, A. Rahim, Ruslinda, Rahman, S. F. A., Mohamad Fathil, Mohamad Faris, Ismail, Mohd. H.
Format: Article
Language:English
Published: Public Library of Science 2016
Online Access:http://psasir.upm.edu.my/id/eprint/56158/
http://psasir.upm.edu.my/id/eprint/56158/1/56158.PDF
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author Md Nor, Mohammad Nuzaihan
Hashim, Uda
Md Arshad, Mohd Khairuddin
A. Rahim, Ruslinda
Rahman, S. F. A.
Mohamad Fathil, Mohamad Faris
Ismail, Mohd. H.
author_facet Md Nor, Mohammad Nuzaihan
Hashim, Uda
Md Arshad, Mohd Khairuddin
A. Rahim, Ruslinda
Rahman, S. F. A.
Mohamad Fathil, Mohamad Faris
Ismail, Mohd. H.
author_sort Md Nor, Mohammad Nuzaihan
building UPM Institutional Repository
collection Online Access
description A top-down nanofabrication approach is used to develop silicon nanowires from silicon-oninsulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications.
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spelling upm-561582017-07-03T09:40:10Z http://psasir.upm.edu.my/id/eprint/56158/ Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications Md Nor, Mohammad Nuzaihan Hashim, Uda Md Arshad, Mohd Khairuddin A. Rahim, Ruslinda Rahman, S. F. A. Mohamad Fathil, Mohamad Faris Ismail, Mohd. H. A top-down nanofabrication approach is used to develop silicon nanowires from silicon-oninsulator (SOI) wafers and involves direct-write electron beam lithography (EBL), inductively coupled plasma-reactive ion etching (ICP-RIE) and a size reduction process. To achieve nanometer scale size, the crucial factors contributing to the EBL and size reduction processes are highlighted. The resulting silicon nanowires, which are 20 nm in width and 30 nm in height (with a triangular shape) and have a straight structure over the length of 400 μm, are fabricated precisely at the designed location on the device. The device is applied in biomolecule detection based on the changes in drain current (Ids), electrical resistance and conductance of the silicon nanowires upon hybridization to complementary target deoxyribonucleic acid (DNA). In this context, the scaled-down device exhibited superior performances in terms of good specificity and high sensitivity, with a limit of detection (LOD) of 10 fM, enables for efficient label-free, direct and higher-accuracy DNA molecules detection. Thus, this silicon nanowire can be used as an improved transducer and serves as novel biosensor for future biomedical diagnostic applications. Public Library of Science 2016 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/56158/1/56158.PDF Md Nor, Mohammad Nuzaihan and Hashim, Uda and Md Arshad, Mohd Khairuddin and A. Rahim, Ruslinda and Rahman, S. F. A. and Mohamad Fathil, Mohamad Faris and Ismail, Mohd. H. (2016) Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications. PLOS ONE, 11 (3). art. no. e0152318. pp. 1-21. ISSN 1932-6203 10.1371/journal.pone.0152318
spellingShingle Md Nor, Mohammad Nuzaihan
Hashim, Uda
Md Arshad, Mohd Khairuddin
A. Rahim, Ruslinda
Rahman, S. F. A.
Mohamad Fathil, Mohamad Faris
Ismail, Mohd. H.
Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications
title Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications
title_full Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications
title_fullStr Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications
title_full_unstemmed Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications
title_short Top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications
title_sort top-down nanofabrication and characterization of 20 nm silicon nanowires for biosensing applications
url http://psasir.upm.edu.my/id/eprint/56158/
http://psasir.upm.edu.my/id/eprint/56158/
http://psasir.upm.edu.my/id/eprint/56158/1/56158.PDF