Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors
The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to th...
| Main Authors: | , , , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2014
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| Online Access: | http://psasir.upm.edu.my/id/eprint/55922/ http://psasir.upm.edu.my/id/eprint/55922/1/Dependency%20of%20electrical%20characteristics%20on%20nano%20gap%20variation%20in%20pinch%20off%20lateral%20gate%20transistors.pdf |
| _version_ | 1848852937358442496 |
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| author | Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Yeop Majlis, Burhanuddin Saion, Elias Hamidon, Mohd Nizar Hutagalung, Sabar D. |
| author_facet | Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Yeop Majlis, Burhanuddin Saion, Elias Hamidon, Mohd Nizar Hutagalung, Sabar D. |
| author_sort | Larki, Farhad |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation. |
| first_indexed | 2025-11-15T10:46:01Z |
| format | Conference or Workshop Item |
| id | upm-55922 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T10:46:01Z |
| publishDate | 2014 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-559222017-06-30T09:54:43Z http://psasir.upm.edu.my/id/eprint/55922/ Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Yeop Majlis, Burhanuddin Saion, Elias Hamidon, Mohd Nizar Hutagalung, Sabar D. The variation of electrical characteristics with nano size air gap variation between gates and channel of a pinch off lateral gate transistor were investigated using 3D Technology Computer Aided Design. It is found that smaller nanosize gaps which can be formed by approaching the lateral gates to the channel can improve the switching performance of the device significantly. Devices with different air gap demonstrate same on state current and maximum transconductance of 0.05 μS, however the on/off current ratio (ION/IOFF) is varied by three orders of magnitude. The parameters such as electric field and band energy variation are investigated in order to explain the variation of electrical characteristics by air gap variation. IEEE 2014 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/55922/1/Dependency%20of%20electrical%20characteristics%20on%20nano%20gap%20variation%20in%20pinch%20off%20lateral%20gate%20transistors.pdf Larki, Farhad and Dehzangi, Arash and Md. Ali, Sawal Hamid and Jalar @ Jalil, Azman and Islam, Md. Shabiul and Yeop Majlis, Burhanuddin and Saion, Elias and Hamidon, Mohd Nizar and Hutagalung, Sabar D. (2014) Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors. In: 2014 IEEE International Conference on Semiconductor Electronics (ICSE 2014), 27-29 Aug. 2014, Berjaya Times Square Hotel, Kuala Lumpur, Malaysia. (pp. 170-173). 10.1109/SMELEC.2014.6920823 |
| spellingShingle | Larki, Farhad Dehzangi, Arash Md. Ali, Sawal Hamid Jalar @ Jalil, Azman Islam, Md. Shabiul Yeop Majlis, Burhanuddin Saion, Elias Hamidon, Mohd Nizar Hutagalung, Sabar D. Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors |
| title | Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors |
| title_full | Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors |
| title_fullStr | Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors |
| title_full_unstemmed | Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors |
| title_short | Dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors |
| title_sort | dependency of electrical characteristics on nano gap variation in pinch off lateral gate transistors |
| url | http://psasir.upm.edu.my/id/eprint/55922/ http://psasir.upm.edu.my/id/eprint/55922/ http://psasir.upm.edu.my/id/eprint/55922/1/Dependency%20of%20electrical%20characteristics%20on%20nano%20gap%20variation%20in%20pinch%20off%20lateral%20gate%20transistors.pdf |