Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector

Achieving a cheap and ultrafast metal-semiconductor-metal (MSM) photodetector (PD) for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi) based MSM PD with platinum (Pt) contact electrodes. S...

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Main Authors: Al-Jumaili, Batool Eneaze Bandar, Talib, Zainal Abidin, Ramizy, Asmiet, Ahmed, Naser Mahmoud, L. Y., Josephine, Paiman, Suriati, Muhd, Ibrahim B., Abdulateef, Sinan A.
Format: Article
Language:English
Published: Hindawi 2016
Online Access:http://psasir.upm.edu.my/id/eprint/52875/
http://psasir.upm.edu.my/id/eprint/52875/1/Responsivity%20dependent%20anodization%20current%20density%20of%20nanoporous%20silicon%20based%20MSM%20photodetector.pdf
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author Al-Jumaili, Batool Eneaze Bandar
Talib, Zainal Abidin
Ramizy, Asmiet
Ahmed, Naser Mahmoud
L. Y., Josephine
Paiman, Suriati
Muhd, Ibrahim B.
Abdulateef, Sinan A.
author_facet Al-Jumaili, Batool Eneaze Bandar
Talib, Zainal Abidin
Ramizy, Asmiet
Ahmed, Naser Mahmoud
L. Y., Josephine
Paiman, Suriati
Muhd, Ibrahim B.
Abdulateef, Sinan A.
author_sort Al-Jumaili, Batool Eneaze Bandar
building UPM Institutional Repository
collection Online Access
description Achieving a cheap and ultrafast metal-semiconductor-metal (MSM) photodetector (PD) for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi) based MSM PD with platinum (Pt) contact electrodes. Such NPSi samples are grown from n-type Si (100) wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311) lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density.
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spelling upm-528752022-03-15T01:05:51Z http://psasir.upm.edu.my/id/eprint/52875/ Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector Al-Jumaili, Batool Eneaze Bandar Talib, Zainal Abidin Ramizy, Asmiet Ahmed, Naser Mahmoud L. Y., Josephine Paiman, Suriati Muhd, Ibrahim B. Abdulateef, Sinan A. Achieving a cheap and ultrafast metal-semiconductor-metal (MSM) photodetector (PD) for very high-speed communications is ever-demanding. We report the influence of anodization current density variation on the response of nanoporous silicon (NPSi) based MSM PD with platinum (Pt) contact electrodes. Such NPSi samples are grown from n-type Si (100) wafer using photoelectrochemical etching with three different anodization current densities. FESEM images of as-prepared samples revealed the existence of discrete pores with spherical and square-like shapes. XRD pattern displayed the growth of nanocrystals with (311) lattice orientation. The nanocrystallite sizes obtained using Scherrer formula are found to be between 20.8 nm and 28.6 nm. The observed rectifying behavior in the characteristics is ascribed to the Pt/PSi/n-Si Schottky barrier formation, where the barrier height at the Pt/PSi interface is estimated to be 0.69 eV. Furthermore, this Pt/PSi/Pt MSM PD achieved maximum responsivity of 0.17 A/W and quantum efficiency as much as 39.3%. The photoresponse of this NPSi based MSM PD demonstrated excellent repeatability, fast response, and enhanced saturation current with increasing anodization current density. Hindawi 2016 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/52875/1/Responsivity%20dependent%20anodization%20current%20density%20of%20nanoporous%20silicon%20based%20MSM%20photodetector.pdf Al-Jumaili, Batool Eneaze Bandar and Talib, Zainal Abidin and Ramizy, Asmiet and Ahmed, Naser Mahmoud and L. Y., Josephine and Paiman, Suriati and Muhd, Ibrahim B. and Abdulateef, Sinan A. (2016) Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector. Journal of Nanomaterials, 2016. art. no. 1890364. pp. 1-8. ISSN 1687-4110; ISSN:1687-4129 https://www.hindawi.com/journals/jnm/2016/1890364/ 10.1155/2016/1890364
spellingShingle Al-Jumaili, Batool Eneaze Bandar
Talib, Zainal Abidin
Ramizy, Asmiet
Ahmed, Naser Mahmoud
L. Y., Josephine
Paiman, Suriati
Muhd, Ibrahim B.
Abdulateef, Sinan A.
Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector
title Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector
title_full Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector
title_fullStr Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector
title_full_unstemmed Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector
title_short Responsivity dependent anodization current density of nanoporous silicon based MSM photodetector
title_sort responsivity dependent anodization current density of nanoporous silicon based msm photodetector
url http://psasir.upm.edu.my/id/eprint/52875/
http://psasir.upm.edu.my/id/eprint/52875/
http://psasir.upm.edu.my/id/eprint/52875/
http://psasir.upm.edu.my/id/eprint/52875/1/Responsivity%20dependent%20anodization%20current%20density%20of%20nanoporous%20silicon%20based%20MSM%20photodetector.pdf