A multiband 130nm CMOS second order band pass filter for LTE bands
With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) i...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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IEEE
2015
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| Online Access: | http://psasir.upm.edu.my/id/eprint/48193/ http://psasir.upm.edu.my/id/eprint/48193/1/A%20multiband%20130nm%20CMOS%20second%20order%20band%20pass%20filter%20for%20LTE%20bands.pdf |
| _version_ | 1848851015150862336 |
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| author | Kamsani, Noor Ain Thangasamy, Veeraiyah Bukhori, Muhammad Faiz Shafie, Suhaide |
| author_facet | Kamsani, Noor Ain Thangasamy, Veeraiyah Bukhori, Muhammad Faiz Shafie, Suhaide |
| author_sort | Kamsani, Noor Ain |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) in 130nm standard CMOS technology that can operates in 12 different LTE bands (band 1, 2, 3, 4, 5, 8, 9, 11, 18, 19, 21 and 25). The filter response is tuned by employing switched capacitors in parallel with LC resonant circuit; and Q-factor of the filter is tuned using cross-coupled differential pair connected across the resonant circuit. The gain of 30dB with maximum bandwidth of 145 MHz at 900MHz center frequency, 328MHz at 1.5GHz center frequency and 594MHz at 2GHz center frequency is achieved at 3.3V supply. The Q-factor of the filter is tunable through 2.1 to 8.1. The 1-dB compression point (P1dB), third order intercept point (IP3), and noise figure achieved are -39dBm, -25dBm and 3.83dB respectively. The designed filter has the features of less BOM count and smaller area making it suitable for integration in modern wireless applications. |
| first_indexed | 2025-11-15T10:15:27Z |
| format | Conference or Workshop Item |
| id | upm-48193 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T10:15:27Z |
| publishDate | 2015 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-481932016-08-04T05:17:05Z http://psasir.upm.edu.my/id/eprint/48193/ A multiband 130nm CMOS second order band pass filter for LTE bands Kamsani, Noor Ain Thangasamy, Veeraiyah Bukhori, Muhammad Faiz Shafie, Suhaide With increasing consumer demand for wireless devices to support multiple air standards and applications, there have been increased trends for implementation multimode multiband (MMMB) devices in the RF front-end of wireless handsets. This paper presents a design of multiband band pass filter (BPF) in 130nm standard CMOS technology that can operates in 12 different LTE bands (band 1, 2, 3, 4, 5, 8, 9, 11, 18, 19, 21 and 25). The filter response is tuned by employing switched capacitors in parallel with LC resonant circuit; and Q-factor of the filter is tuned using cross-coupled differential pair connected across the resonant circuit. The gain of 30dB with maximum bandwidth of 145 MHz at 900MHz center frequency, 328MHz at 1.5GHz center frequency and 594MHz at 2GHz center frequency is achieved at 3.3V supply. The Q-factor of the filter is tunable through 2.1 to 8.1. The 1-dB compression point (P1dB), third order intercept point (IP3), and noise figure achieved are -39dBm, -25dBm and 3.83dB respectively. The designed filter has the features of less BOM count and smaller area making it suitable for integration in modern wireless applications. IEEE 2015 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/48193/1/A%20multiband%20130nm%20CMOS%20second%20order%20band%20pass%20filter%20for%20LTE%20bands.pdf Kamsani, Noor Ain and Thangasamy, Veeraiyah and Bukhori, Muhammad Faiz and Shafie, Suhaide (2015) A multiband 130nm CMOS second order band pass filter for LTE bands. In: 2015 IEEE International Circuits and Systems Symposium (ICSyS 2015), 2-4 Sept. 2015, Holiday Villa Beach Resort & Spa, Langkawi, Kedah. (pp. 100-105). 10.1109/CircuitsAndSystems.2015.7394073 |
| spellingShingle | Kamsani, Noor Ain Thangasamy, Veeraiyah Bukhori, Muhammad Faiz Shafie, Suhaide A multiband 130nm CMOS second order band pass filter for LTE bands |
| title | A multiband 130nm CMOS second order band pass filter for LTE bands |
| title_full | A multiband 130nm CMOS second order band pass filter for LTE bands |
| title_fullStr | A multiband 130nm CMOS second order band pass filter for LTE bands |
| title_full_unstemmed | A multiband 130nm CMOS second order band pass filter for LTE bands |
| title_short | A multiband 130nm CMOS second order band pass filter for LTE bands |
| title_sort | multiband 130nm cmos second order band pass filter for lte bands |
| url | http://psasir.upm.edu.my/id/eprint/48193/ http://psasir.upm.edu.my/id/eprint/48193/ http://psasir.upm.edu.my/id/eprint/48193/1/A%20multiband%20130nm%20CMOS%20second%20order%20band%20pass%20filter%20for%20LTE%20bands.pdf |