Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes
Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitati...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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IEEE
2010
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| Online Access: | http://psasir.upm.edu.my/id/eprint/47791/ http://psasir.upm.edu.my/id/eprint/47791/1/Two-photon%20photoluminescence%20induced%20defects%20on%20InGaN%20crystal%20and%20light%20emitting%20diodes.pdf |
| _version_ | 1848850906461765632 |
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| author | Muhammad Noor, Ahmad Shukri Zainal Abidin, Mohd Shahnan Kawata, Yoshimasa |
| author_facet | Muhammad Noor, Ahmad Shukri Zainal Abidin, Mohd Shahnan Kawata, Yoshimasa |
| author_sort | Muhammad Noor, Ahmad Shukri |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitation gives photoluminescence read-out compared to two-photon excitation which no photoluminescence detected at the bandgap wavelength. This is due to the excitation states which the transition of electron for two-photon excitation to occur have been demolished by the annealing of the sample which involved two-photon quenching process. The dependency of excitation power with respective photoluminescence is elaborated to confirmed the single- and two-photon excitation photoluminescence methods. |
| first_indexed | 2025-11-15T10:13:44Z |
| format | Conference or Workshop Item |
| id | upm-47791 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T10:13:44Z |
| publishDate | 2010 |
| publisher | IEEE |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-477912016-07-15T08:43:56Z http://psasir.upm.edu.my/id/eprint/47791/ Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes Muhammad Noor, Ahmad Shukri Zainal Abidin, Mohd Shahnan Kawata, Yoshimasa Two-photon excitation techniques used in fabricating lines defects were done on a light emitting diode chip. Simultaneous detection of a quenched wide-gap semiconductor crystal has been observed using single- and two-photon photoluminescence. It was found at the quenched area, single-photon excitation gives photoluminescence read-out compared to two-photon excitation which no photoluminescence detected at the bandgap wavelength. This is due to the excitation states which the transition of electron for two-photon excitation to occur have been demolished by the annealing of the sample which involved two-photon quenching process. The dependency of excitation power with respective photoluminescence is elaborated to confirmed the single- and two-photon excitation photoluminescence methods. IEEE 2010 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/47791/1/Two-photon%20photoluminescence%20induced%20defects%20on%20InGaN%20crystal%20and%20light%20emitting%20diodes.pdf Muhammad Noor, Ahmad Shukri and Zainal Abidin, Mohd Shahnan and Kawata, Yoshimasa (2010) Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes. In: 1st International Conference on Photonics 2010 (ICP 2010), 5-7 July 2010, Langkawi, Kedah. . 10.1109/ICP.2010.5604436 |
| spellingShingle | Muhammad Noor, Ahmad Shukri Zainal Abidin, Mohd Shahnan Kawata, Yoshimasa Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes |
| title | Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes |
| title_full | Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes |
| title_fullStr | Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes |
| title_full_unstemmed | Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes |
| title_short | Two-photon photoluminescence induced defects on InGaN crystal and light emitting diodes |
| title_sort | two-photon photoluminescence induced defects on ingan crystal and light emitting diodes |
| url | http://psasir.upm.edu.my/id/eprint/47791/ http://psasir.upm.edu.my/id/eprint/47791/ http://psasir.upm.edu.my/id/eprint/47791/1/Two-photon%20photoluminescence%20induced%20defects%20on%20InGaN%20crystal%20and%20light%20emitting%20diodes.pdf |