Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature

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Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature

The effects of hydrogen-annealing at different temperatures (300, 400, 500 and 600°C) on physical properties of In2−xFexO3 (x=0.025) thin film were investigated. The structural measurement using XRD shows that the film has a single In2O3 phase structure when annealed in hydrogen at 300–500°C, howeve...

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Bibliographic Details
Main Authors:	Hussein Baqiah, Hussein Abdullah, Ibrahim, Noor Baa'yah, Shaari, Abdul Halim, Chen, Soo Kien, Lim, Kean Pah, Awang Kechik, Mohd Mustafa
Format:	Article
Language:	English
Published:	Elsevier 2016
Online Access:	http://psasir.upm.edu.my/id/eprint/47408/ http://psasir.upm.edu.my/id/eprint/47408/1/Physical%20properties%20of%20Fe%20doped%20In2O3%20magnetic%20semiconductor%20annealed%20in%20hydrogen%20at%20different%20temperature.pdf

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