APA (7th ed.) Citation

Hussein Baqiah, H. A., Ibrahim, N. B., Shaari, A. H., Chen, S. K., Lim, K. P., & Awang Kechik, M. M. (2016). Physical properties of Fe doped In2O3 magnetic semiconductor annealed in hydrogen at different temperature. Elsevier.

Chicago Style (17th ed.) Citation

Hussein Baqiah, Hussein Abdullah, Noor Baa'yah Ibrahim, Abdul Halim Shaari, Soo Kien Chen, Kean Pah Lim, and Mohd Mustafa Awang Kechik. Physical Properties of Fe Doped In2O3 Magnetic Semiconductor Annealed in Hydrogen at Different Temperature. Elsevier, 2016.

MLA (9th ed.) Citation

Hussein Baqiah, Hussein Abdullah, et al. Physical Properties of Fe Doped In2O3 Magnetic Semiconductor Annealed in Hydrogen at Different Temperature. Elsevier, 2016.