Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon

Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon

Porous silicon samples were formed on p-type silicon wafer by electrochemical method. Metal porous silicon structure was used to obtain the rectifying behavior. Current density and etching time was studied which affect the photoluminescence and energy band gap. Three different groups were prepared u...

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Bibliographic Details
Main Authors: Hussein, Mohammed Jabbar, Mat Yunus, Wan Mahmood, Mohamed Kamari, Halimah, Zakaria, Azmi, Oleiw, Hind Fadhil
Format: Article
Language:English
Published: Springer 2016
Online Access:http://psasir.upm.edu.my/id/eprint/47366/
http://psasir.upm.edu.my/id/eprint/47366/1/Effect%20of%20current%20density%20and%20etching%20time%20on%20photoluminescence%20and%20energy%20band%20gap%20of%20p-type%20porous%20silicon.pdf

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