Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon
Porous silicon samples were formed on p-type silicon wafer by electrochemical method. Metal porous silicon structure was used to obtain the rectifying behavior. Current density and etching time was studied which affect the photoluminescence and energy band gap. Three different groups were prepared u...
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| Format: | Article |
| Language: | English |
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Springer
2016
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| Online Access: | http://psasir.upm.edu.my/id/eprint/47366/ http://psasir.upm.edu.my/id/eprint/47366/1/Effect%20of%20current%20density%20and%20etching%20time%20on%20photoluminescence%20and%20energy%20band%20gap%20of%20p-type%20porous%20silicon.pdf |
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| author | Hussein, Mohammed Jabbar Mat Yunus, Wan Mahmood Mohamed Kamari, Halimah Zakaria, Azmi Oleiw, Hind Fadhil |
| author_facet | Hussein, Mohammed Jabbar Mat Yunus, Wan Mahmood Mohamed Kamari, Halimah Zakaria, Azmi Oleiw, Hind Fadhil |
| author_sort | Hussein, Mohammed Jabbar |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | Porous silicon samples were formed on p-type silicon wafer by electrochemical method. Metal porous silicon structure was used to obtain the rectifying behavior. Current density and etching time was studied which affect the photoluminescence and energy band gap. Three different groups were prepared using different current density and varying etching time. The optical properties for p-type porous silicon were investigated by photoluminescence (PL) spectroscopy. Findings from study showed that the porous silicon has band gap energy in the range from 1.81 to 2.07 eV. The band gap energy also increased with increasing current density or increasing etching time. The PL peaks showed a steady red color shift from 500 to 800 nm with increasing etching time. |
| first_indexed | 2025-11-15T10:12:01Z |
| format | Article |
| id | upm-47366 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T10:12:01Z |
| publishDate | 2016 |
| publisher | Springer |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-473662016-05-19T05:27:08Z http://psasir.upm.edu.my/id/eprint/47366/ Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon Hussein, Mohammed Jabbar Mat Yunus, Wan Mahmood Mohamed Kamari, Halimah Zakaria, Azmi Oleiw, Hind Fadhil Porous silicon samples were formed on p-type silicon wafer by electrochemical method. Metal porous silicon structure was used to obtain the rectifying behavior. Current density and etching time was studied which affect the photoluminescence and energy band gap. Three different groups were prepared using different current density and varying etching time. The optical properties for p-type porous silicon were investigated by photoluminescence (PL) spectroscopy. Findings from study showed that the porous silicon has band gap energy in the range from 1.81 to 2.07 eV. The band gap energy also increased with increasing current density or increasing etching time. The PL peaks showed a steady red color shift from 500 to 800 nm with increasing etching time. Springer 2016 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/47366/1/Effect%20of%20current%20density%20and%20etching%20time%20on%20photoluminescence%20and%20energy%20band%20gap%20of%20p-type%20porous%20silicon.pdf Hussein, Mohammed Jabbar and Mat Yunus, Wan Mahmood and Mohamed Kamari, Halimah and Zakaria, Azmi and Oleiw, Hind Fadhil (2016) Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon. Optical and Quantum Electronics, 48 (3). art. no. 194. pp. 1-8. ISSN 0306-8919; ESSN: 1572-817X http://link.springer.com/article/10.1007%2Fs11082-016-0476-3 10.1007/s11082-016-0476-3 |
| spellingShingle | Hussein, Mohammed Jabbar Mat Yunus, Wan Mahmood Mohamed Kamari, Halimah Zakaria, Azmi Oleiw, Hind Fadhil Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon |
| title | Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon |
| title_full | Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon |
| title_fullStr | Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon |
| title_full_unstemmed | Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon |
| title_short | Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon |
| title_sort | effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon |
| url | http://psasir.upm.edu.my/id/eprint/47366/ http://psasir.upm.edu.my/id/eprint/47366/ http://psasir.upm.edu.my/id/eprint/47366/ http://psasir.upm.edu.my/id/eprint/47366/1/Effect%20of%20current%20density%20and%20etching%20time%20on%20photoluminescence%20and%20energy%20band%20gap%20of%20p-type%20porous%20silicon.pdf |