Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis
Nickel selenide (NiSe) has been synthesized by solid state method and annealed at five different temperatures, ranging from 323 K to 823 K. The annealing effect on NiSe thermal and carrier transport properties were investigated by using open-cell photoacoustic technique. From analysis of its phase s...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Trans Tech Publications
2015
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| Online Access: | http://psasir.upm.edu.my/id/eprint/43776/ http://psasir.upm.edu.my/id/eprint/43776/1/Annealing%20effect%20on%20photoacoustic%20characterization%20of%20NiSe%20metal%20chalcogenide%20.pdf |
| _version_ | 1848850319693316096 |
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| author | Chin, Pik Yee Talib, Zainal Abidin Mat Yunus, Wan Mahmood Liew, Josephine Ying Chyi Sabli, Nordin Chang, Chung Bin |
| author_facet | Chin, Pik Yee Talib, Zainal Abidin Mat Yunus, Wan Mahmood Liew, Josephine Ying Chyi Sabli, Nordin Chang, Chung Bin |
| author_sort | Chin, Pik Yee |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | Nickel selenide (NiSe) has been synthesized by solid state method and annealed at five different temperatures, ranging from 323 K to 823 K. The annealing effect on NiSe thermal and carrier transport properties were investigated by using open-cell photoacoustic technique. From analysis of its phase signal-frequency, thermal diffusivity, carrier diffusion coefficient, surface recombination velocity and recombination lifetime of the NiSe was determined. The results show that with increasing of the annealing temperature of NiSe sample, the thermal diffusivity and the carrier diffusion coefficient increased. The surface recombination velocity was decreasing as the annealing temperature of the sample increased. The increasing of annealing temperature of the sample also affected the trend of band-to-band recombination lifetime. |
| first_indexed | 2025-11-15T10:04:24Z |
| format | Article |
| id | upm-43776 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T10:04:24Z |
| publishDate | 2015 |
| publisher | Trans Tech Publications |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-437762016-09-20T09:23:27Z http://psasir.upm.edu.my/id/eprint/43776/ Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis Chin, Pik Yee Talib, Zainal Abidin Mat Yunus, Wan Mahmood Liew, Josephine Ying Chyi Sabli, Nordin Chang, Chung Bin Nickel selenide (NiSe) has been synthesized by solid state method and annealed at five different temperatures, ranging from 323 K to 823 K. The annealing effect on NiSe thermal and carrier transport properties were investigated by using open-cell photoacoustic technique. From analysis of its phase signal-frequency, thermal diffusivity, carrier diffusion coefficient, surface recombination velocity and recombination lifetime of the NiSe was determined. The results show that with increasing of the annealing temperature of NiSe sample, the thermal diffusivity and the carrier diffusion coefficient increased. The surface recombination velocity was decreasing as the annealing temperature of the sample increased. The increasing of annealing temperature of the sample also affected the trend of band-to-band recombination lifetime. Trans Tech Publications 2015 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/43776/1/Annealing%20effect%20on%20photoacoustic%20characterization%20of%20NiSe%20metal%20chalcogenide%20.pdf Chin, Pik Yee and Talib, Zainal Abidin and Mat Yunus, Wan Mahmood and Liew, Josephine Ying Chyi and Sabli, Nordin and Chang, Chung Bin (2015) Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis. Advanced Materials Research, 1107. pp. 526-529. ISSN 1022-6680; ESSN: 1662-8985 10.4028/www.scientific.net/AMR.1107.526 |
| spellingShingle | Chin, Pik Yee Talib, Zainal Abidin Mat Yunus, Wan Mahmood Liew, Josephine Ying Chyi Sabli, Nordin Chang, Chung Bin Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis |
| title | Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis |
| title_full | Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis |
| title_fullStr | Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis |
| title_full_unstemmed | Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis |
| title_short | Annealing effect on photoacoustic characterization of NiSe metal chalcogenide semiconductor using phase signal analysis |
| title_sort | annealing effect on photoacoustic characterization of nise metal chalcogenide semiconductor using phase signal analysis |
| url | http://psasir.upm.edu.my/id/eprint/43776/ http://psasir.upm.edu.my/id/eprint/43776/ http://psasir.upm.edu.my/id/eprint/43776/1/Annealing%20effect%20on%20photoacoustic%20characterization%20of%20NiSe%20metal%20chalcogenide%20.pdf |