Ellipsometric study of Si1-x Gex alloy

A report on ellipsometric studies of Si0.5 Ge0.5 and Si0.7 Ge0.3 thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were invest...

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Main Authors: Paiman, Suriati, Sakrani, Samsudi, Ismail, Bakar, Talib, Zainal Abidin
Format: Article
Language:English
Published: Malaysian Solid State Science and Technology Society 2003
Online Access:http://psasir.upm.edu.my/id/eprint/42200/
http://psasir.upm.edu.my/id/eprint/42200/1/Ellipsometric%20study%20of%20Si1-x%20Gex%20alloy.pdf
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author Paiman, Suriati
Sakrani, Samsudi
Ismail, Bakar
Talib, Zainal Abidin
author_facet Paiman, Suriati
Sakrani, Samsudi
Ismail, Bakar
Talib, Zainal Abidin
author_sort Paiman, Suriati
building UPM Institutional Repository
collection Online Access
description A report on ellipsometric studies of Si0.5 Ge0.5 and Si0.7 Ge0.3 thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were investigated using an ellipsometer. In this method, we investigate the changes in refractive indices, n and extinction coefficients, k with film thickness as well as the relevant dielectric constant, ε. The results showed that, at a wavelength of 632.80 nm, n was found to increase with an increase of the germanium contents.
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spelling upm-422002016-04-12T02:24:40Z http://psasir.upm.edu.my/id/eprint/42200/ Ellipsometric study of Si1-x Gex alloy Paiman, Suriati Sakrani, Samsudi Ismail, Bakar Talib, Zainal Abidin A report on ellipsometric studies of Si0.5 Ge0.5 and Si0.7 Ge0.3 thin films is described. The samples were earlier prepared from SiGe disks of 3” diameter using RF magnetron sputtering and the films were deposited onto glass substrates at room temperature. Some of the optical properties were investigated using an ellipsometer. In this method, we investigate the changes in refractive indices, n and extinction coefficients, k with film thickness as well as the relevant dielectric constant, ε. The results showed that, at a wavelength of 632.80 nm, n was found to increase with an increase of the germanium contents. Malaysian Solid State Science and Technology Society 2003 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/42200/1/Ellipsometric%20study%20of%20Si1-x%20Gex%20alloy.pdf Paiman, Suriati and Sakrani, Samsudi and Ismail, Bakar and Talib, Zainal Abidin (2003) Ellipsometric study of Si1-x Gex alloy. Solid State Science and Technology, 11 (1). pp. 89-94. ISSN 0128-7389 http://masshp.net/journal/all%20journal/VOLUME%2011%20NO.%201,%202003/htm/Vol.%2011,%20No%201%20%282003%29%2089-94.htm
spellingShingle Paiman, Suriati
Sakrani, Samsudi
Ismail, Bakar
Talib, Zainal Abidin
Ellipsometric study of Si1-x Gex alloy
title Ellipsometric study of Si1-x Gex alloy
title_full Ellipsometric study of Si1-x Gex alloy
title_fullStr Ellipsometric study of Si1-x Gex alloy
title_full_unstemmed Ellipsometric study of Si1-x Gex alloy
title_short Ellipsometric study of Si1-x Gex alloy
title_sort ellipsometric study of si1-x gex alloy
url http://psasir.upm.edu.my/id/eprint/42200/
http://psasir.upm.edu.my/id/eprint/42200/
http://psasir.upm.edu.my/id/eprint/42200/1/Ellipsometric%20study%20of%20Si1-x%20Gex%20alloy.pdf