Growth of InP nanowires on silicon using a thin buffer layer

Growth of InP nanowires on silicon using a thin buffer layer

InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology...

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Bibliographic Details
Main Authors: Fonseka, H. Aruni, Tan, Hark Hoe, Kang, Jung Hyun, Paiman, Suriati, Gao, Qian, Parkinson, Patrick, Jagadish, Chennupati
Format: Conference or Workshop Item
Language:English
Published: IEEE 2012
Online Access:http://psasir.upm.edu.my/id/eprint/39268/
http://psasir.upm.edu.my/id/eprint/39268/1/Growth%20of%20InP%20nanowires%20on%20silicon%20using%20a%20thin%20buffer%20layer.pdf

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