Growth of InP nanowires on silicon using a thin buffer layer

InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology...

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Main Authors: Fonseka, H. Aruni, Tan, Hark Hoe, Kang, Jung Hyun, Paiman, Suriati, Gao, Qian, Parkinson, Patrick, Jagadish, Chennupati
Format: Conference or Workshop Item
Language:English
Published: IEEE 2012
Online Access:http://psasir.upm.edu.my/id/eprint/39268/
http://psasir.upm.edu.my/id/eprint/39268/1/Growth%20of%20InP%20nanowires%20on%20silicon%20using%20a%20thin%20buffer%20layer.pdf
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author Fonseka, H. Aruni
Tan, Hark Hoe
Kang, Jung Hyun
Paiman, Suriati
Gao, Qian
Parkinson, Patrick
Jagadish, Chennupati
author_facet Fonseka, H. Aruni
Tan, Hark Hoe
Kang, Jung Hyun
Paiman, Suriati
Gao, Qian
Parkinson, Patrick
Jagadish, Chennupati
author_sort Fonseka, H. Aruni
building UPM Institutional Repository
collection Online Access
description InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.
first_indexed 2025-11-15T09:44:59Z
format Conference or Workshop Item
id upm-39268
institution Universiti Putra Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T09:44:59Z
publishDate 2012
publisher IEEE
recordtype eprints
repository_type Digital Repository
spelling upm-392682018-01-15T09:43:27Z http://psasir.upm.edu.my/id/eprint/39268/ Growth of InP nanowires on silicon using a thin buffer layer Fonseka, H. Aruni Tan, Hark Hoe Kang, Jung Hyun Paiman, Suriati Gao, Qian Parkinson, Patrick Jagadish, Chennupati InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate. IEEE 2012 Conference or Workshop Item PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/39268/1/Growth%20of%20InP%20nanowires%20on%20silicon%20using%20a%20thin%20buffer%20layer.pdf Fonseka, H. Aruni and Tan, Hark Hoe and Kang, Jung Hyun and Paiman, Suriati and Gao, Qian and Parkinson, Patrick and Jagadish, Chennupati (2012) Growth of InP nanowires on silicon using a thin buffer layer. In: 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012), 12-14 Dec. 2012, Melbourne, Victoria, Australia. (pp. 43-44). 10.1109/COMMAD.2012.6472351
spellingShingle Fonseka, H. Aruni
Tan, Hark Hoe
Kang, Jung Hyun
Paiman, Suriati
Gao, Qian
Parkinson, Patrick
Jagadish, Chennupati
Growth of InP nanowires on silicon using a thin buffer layer
title Growth of InP nanowires on silicon using a thin buffer layer
title_full Growth of InP nanowires on silicon using a thin buffer layer
title_fullStr Growth of InP nanowires on silicon using a thin buffer layer
title_full_unstemmed Growth of InP nanowires on silicon using a thin buffer layer
title_short Growth of InP nanowires on silicon using a thin buffer layer
title_sort growth of inp nanowires on silicon using a thin buffer layer
url http://psasir.upm.edu.my/id/eprint/39268/
http://psasir.upm.edu.my/id/eprint/39268/
http://psasir.upm.edu.my/id/eprint/39268/1/Growth%20of%20InP%20nanowires%20on%20silicon%20using%20a%20thin%20buffer%20layer.pdf