Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate
Addition of argon gas, with different flow rates, to vacuum evaporation deposition of film electrodes from Cu2SnSe3 source, affect nature and properties of the resulting films. While keeping other factors constant, it is possible to control nature and properties of the resulting films simply by cont...
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| Format: | Article |
| Language: | English |
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Elsevier
2014
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| Online Access: | http://psasir.upm.edu.my/id/eprint/37666/ http://psasir.upm.edu.my/id/eprint/37666/1/Film%20electrodes%20deposited%20from%20Cu2SnSe3%20source%20in%20comparison%20with%20those%20deposited%20from%20SnSe%20and%20Cu2ZnSnSe4%20sources%20by%20thermal%20vacuum%20evaporation.pdf |
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| author | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi |
| author_facet | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi |
| author_sort | Sabli, Nordin |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | Addition of argon gas, with different flow rates, to vacuum evaporation deposition of film electrodes from Cu2SnSe3 source, affect nature and properties of the resulting films. While keeping other factors constant, it is possible to control nature and properties of the resulting films simply by controlling the argon gas flow rate. This work shows that films deposited from Cu2SnSe3 under high argon gas flow rate (25 cm3/min) involved SnSe as a major compound, with low concentration of Cu dopant. The film showed higher photoresponse than those deposited from pristine SnSe source. Under lower argon gas flow rates, the resulting films were dominated by the ternary source compound itself, which also showed lower photoresponse than that deposited under higher flow rate. Structure, morphology, chemical composition, optical and photo-electrochemical characteristics have all been studied for films deposited from Cu2SnSe3 under different argon gas flow rates, in parallel with earlier films deposited from SnSe and Cu2ZnSnSe4. The films deposited from Cu2SnSe3 or Cu2ZnSnSe4 under high argon gas flow rate showed a p-type semiconductor behavior with energy gap of about 1.0 eV which confirms the existence of SnSe as a dominant component in each case. A mechanism, which is mainly based on a model of elastic collisions, is proposed to explain the production of SnSe films from the ternary and quaternary sources. On the other hand, the presence of low concentrations of Cu or/and Zn species in the resulting SnSe films is presumably responsible for enhanced photoresponse, as compared to films deposited from pristine SnSe. |
| first_indexed | 2025-11-15T09:38:10Z |
| format | Article |
| id | upm-37666 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T09:38:10Z |
| publishDate | 2014 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-376662016-01-22T03:56:36Z http://psasir.upm.edu.my/id/eprint/37666/ Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi Addition of argon gas, with different flow rates, to vacuum evaporation deposition of film electrodes from Cu2SnSe3 source, affect nature and properties of the resulting films. While keeping other factors constant, it is possible to control nature and properties of the resulting films simply by controlling the argon gas flow rate. This work shows that films deposited from Cu2SnSe3 under high argon gas flow rate (25 cm3/min) involved SnSe as a major compound, with low concentration of Cu dopant. The film showed higher photoresponse than those deposited from pristine SnSe source. Under lower argon gas flow rates, the resulting films were dominated by the ternary source compound itself, which also showed lower photoresponse than that deposited under higher flow rate. Structure, morphology, chemical composition, optical and photo-electrochemical characteristics have all been studied for films deposited from Cu2SnSe3 under different argon gas flow rates, in parallel with earlier films deposited from SnSe and Cu2ZnSnSe4. The films deposited from Cu2SnSe3 or Cu2ZnSnSe4 under high argon gas flow rate showed a p-type semiconductor behavior with energy gap of about 1.0 eV which confirms the existence of SnSe as a dominant component in each case. A mechanism, which is mainly based on a model of elastic collisions, is proposed to explain the production of SnSe films from the ternary and quaternary sources. On the other hand, the presence of low concentrations of Cu or/and Zn species in the resulting SnSe films is presumably responsible for enhanced photoresponse, as compared to films deposited from pristine SnSe. Elsevier 2014-09 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/37666/1/Film%20electrodes%20deposited%20from%20Cu2SnSe3%20source%20in%20comparison%20with%20those%20deposited%20from%20SnSe%20and%20Cu2ZnSnSe4%20sources%20by%20thermal%20vacuum%20evaporation.pdf Sabli, Nordin and Talib, Zainal Abidin and Mat Yunus, Wan Mahmood and Zainal, Zulkarnain and Hilal, Hikmat S. and Fujii, Masatoshi (2014) Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate. Electrochimica Acta, 139. pp. 238-243. ISSN 0013-4686; ESSN: 1873-3859 http://www.sciencedirect.com/science/article/pii/S0013468614014169#authorabs00151 10.1016/j.electacta.2014.06.167 |
| spellingShingle | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate |
| title | Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate |
| title_full | Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate |
| title_fullStr | Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate |
| title_full_unstemmed | Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate |
| title_short | Film electrodes deposited from Cu2SnSe3 source in comparison with those deposited from SnSe and Cu2ZnSnSe4 sources by thermal vacuum evaporation: effect of argon gas flow rate |
| title_sort | film electrodes deposited from cu2snse3 source in comparison with those deposited from snse and cu2znsnse4 sources by thermal vacuum evaporation: effect of argon gas flow rate |
| url | http://psasir.upm.edu.my/id/eprint/37666/ http://psasir.upm.edu.my/id/eprint/37666/ http://psasir.upm.edu.my/id/eprint/37666/ http://psasir.upm.edu.my/id/eprint/37666/1/Film%20electrodes%20deposited%20from%20Cu2SnSe3%20source%20in%20comparison%20with%20those%20deposited%20from%20SnSe%20and%20Cu2ZnSnSe4%20sources%20by%20thermal%20vacuum%20evaporation.pdf |