Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation
This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, P...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Hindawi Publishing Corporation
2014
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| Online Access: | http://psasir.upm.edu.my/id/eprint/35910/ http://psasir.upm.edu.my/id/eprint/35910/1/Ultra-Low-Voltage%20CMOS-Based%20Current%20Bleeding%20Mixer%20with.pdf |
| _version_ | 1848848186077085696 |
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| author | Tan, Gim Heng Mohd Sidek, Roslina Ramiah, Harikrishnan Chong, Wei Keat Lioe, De Xing |
| author_facet | Tan, Gim Heng Mohd Sidek, Roslina Ramiah, Harikrishnan Chong, Wei Keat Lioe, De Xing |
| author_sort | Tan, Gim Heng |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2. |
| first_indexed | 2025-11-15T09:30:29Z |
| format | Article |
| id | upm-35910 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T09:30:29Z |
| publishDate | 2014 |
| publisher | Hindawi Publishing Corporation |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-359102016-02-11T05:11:34Z http://psasir.upm.edu.my/id/eprint/35910/ Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation Tan, Gim Heng Mohd Sidek, Roslina Ramiah, Harikrishnan Chong, Wei Keat Lioe, De Xing This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2. Hindawi Publishing Corporation 2014 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/35910/1/Ultra-Low-Voltage%20CMOS-Based%20Current%20Bleeding%20Mixer%20with.pdf Tan, Gim Heng and Mohd Sidek, Roslina and Ramiah, Harikrishnan and Chong, Wei Keat and Lioe, De Xing (2014) Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation. The Scientific World Journal, 2014. art. no. 163414. pp. 1-5. ISSN 2356-6140; ESSN: 1537-744X http://www.hindawi.com/journals/tswj/2014/163414/abs/ 10.1155/2014/163414 |
| spellingShingle | Tan, Gim Heng Mohd Sidek, Roslina Ramiah, Harikrishnan Chong, Wei Keat Lioe, De Xing Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation |
| title | Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation |
| title_full | Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation |
| title_fullStr | Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation |
| title_full_unstemmed | Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation |
| title_short | Ultra-low-voltage CMOS-based current bleeding mixer with high LO-RF isolation |
| title_sort | ultra-low-voltage cmos-based current bleeding mixer with high lo-rf isolation |
| url | http://psasir.upm.edu.my/id/eprint/35910/ http://psasir.upm.edu.my/id/eprint/35910/ http://psasir.upm.edu.my/id/eprint/35910/ http://psasir.upm.edu.my/id/eprint/35910/1/Ultra-Low-Voltage%20CMOS-Based%20Current%20Bleeding%20Mixer%20with.pdf |