MOCVD-grown indium phosphide nanowires for optoelectronics

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MOCVD-grown indium phosphide nanowires for optoelectronics

We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallog...

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Bibliographic Details
Main Authors:	Paiman, Suriati, Gao, Qiang, Joyce, Hannah, Tan, Hark Hoe, Jagadish, Chennupati, Kim, Yong, Guo, Yanan, Kuranananda, Pemasiri, Mohammad, Montazeri, Howard, Jackson, Leigh, Smith
Format:	Article
Language:	English
Published:	Trans Tech Publications 2014
Online Access:	http://psasir.upm.edu.my/id/eprint/34538/ http://psasir.upm.edu.my/id/eprint/34538/1/MOCVD-grown%20indium%20phosphide%20nanowires%20for%20optoelectronics.pdf

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