MOCVD-grown indium phosphide nanowires for optoelectronics
We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallog...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Trans Tech Publications
2014
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| Online Access: | http://psasir.upm.edu.my/id/eprint/34538/ http://psasir.upm.edu.my/id/eprint/34538/1/MOCVD-grown%20indium%20phosphide%20nanowires%20for%20optoelectronics.pdf |
| _version_ | 1848847800729600000 |
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| author | Paiman, Suriati Gao, Qiang Joyce, Hannah Tan, Hark Hoe Jagadish, Chennupati Kim, Yong Guo, Yanan Kuranananda, Pemasiri Mohammad, Montazeri Howard, Jackson Leigh, Smith |
| author_facet | Paiman, Suriati Gao, Qiang Joyce, Hannah Tan, Hark Hoe Jagadish, Chennupati Kim, Yong Guo, Yanan Kuranananda, Pemasiri Mohammad, Montazeri Howard, Jackson Leigh, Smith |
| author_sort | Paiman, Suriati |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallographic quality, and optical properties of the resulting nanowires. Significantly, we find that higher growth temperatures or higher V/III ratios promote the formation of wurtzite (WZ) nanowires while zinc-blende (ZB) nanowires are favourable at lower growth temperatures and lower V/III ratios. Results also show that InP nanowires grow preferably in the WZ crystal structure than the ZB crystal structure with increasing V/III ratio or decreasing diameter. This causes a blue-shift in the bandgap as growth temperature increases. These results show that careful control of growth temperature, V/III ratio and catalyst size are crucial for obtaining InP nanowires of a specific crystal structure needed for device applications. |
| first_indexed | 2025-11-15T09:24:22Z |
| format | Article |
| id | upm-34538 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T09:24:22Z |
| publishDate | 2014 |
| publisher | Trans Tech Publications |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-345382016-09-19T03:17:40Z http://psasir.upm.edu.my/id/eprint/34538/ MOCVD-grown indium phosphide nanowires for optoelectronics Paiman, Suriati Gao, Qiang Joyce, Hannah Tan, Hark Hoe Jagadish, Chennupati Kim, Yong Guo, Yanan Kuranananda, Pemasiri Mohammad, Montazeri Howard, Jackson Leigh, Smith We demonstrate how growth parameters may be adopted to produce morphologically controlled high-quality indium phosphide (InP) nanowires suitable for optoelectronic device applications. Growth temperature, V/III ratio, and catalyst particle size have a significant effect on the morphology, crystallographic quality, and optical properties of the resulting nanowires. Significantly, we find that higher growth temperatures or higher V/III ratios promote the formation of wurtzite (WZ) nanowires while zinc-blende (ZB) nanowires are favourable at lower growth temperatures and lower V/III ratios. Results also show that InP nanowires grow preferably in the WZ crystal structure than the ZB crystal structure with increasing V/III ratio or decreasing diameter. This causes a blue-shift in the bandgap as growth temperature increases. These results show that careful control of growth temperature, V/III ratio and catalyst size are crucial for obtaining InP nanowires of a specific crystal structure needed for device applications. Trans Tech Publications 2014 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/34538/1/MOCVD-grown%20indium%20phosphide%20nanowires%20for%20optoelectronics.pdf Paiman, Suriati and Gao, Qiang and Joyce, Hannah and Tan, Hark Hoe and Jagadish, Chennupati and Kim, Yong and Guo, Yanan and Kuranananda, Pemasiri and Mohammad, Montazeri and Howard, Jackson and Leigh, Smith (2014) MOCVD-grown indium phosphide nanowires for optoelectronics. Advanced Materials Research, 832. pp. 201-205. ISSN 1022-6680; ESSN: 1662-8985 http://www.scientific.net/AMR.832.201 10.4028/www.scientific.net/AMR.832.201 |
| spellingShingle | Paiman, Suriati Gao, Qiang Joyce, Hannah Tan, Hark Hoe Jagadish, Chennupati Kim, Yong Guo, Yanan Kuranananda, Pemasiri Mohammad, Montazeri Howard, Jackson Leigh, Smith MOCVD-grown indium phosphide nanowires for optoelectronics |
| title | MOCVD-grown indium phosphide nanowires for optoelectronics |
| title_full | MOCVD-grown indium phosphide nanowires for optoelectronics |
| title_fullStr | MOCVD-grown indium phosphide nanowires for optoelectronics |
| title_full_unstemmed | MOCVD-grown indium phosphide nanowires for optoelectronics |
| title_short | MOCVD-grown indium phosphide nanowires for optoelectronics |
| title_sort | mocvd-grown indium phosphide nanowires for optoelectronics |
| url | http://psasir.upm.edu.my/id/eprint/34538/ http://psasir.upm.edu.my/id/eprint/34538/ http://psasir.upm.edu.my/id/eprint/34538/ http://psasir.upm.edu.my/id/eprint/34538/1/MOCVD-grown%20indium%20phosphide%20nanowires%20for%20optoelectronics.pdf |