$Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers$
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Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers

Quantitative estimates are made of the varia- tions of real refractive index (n ') and gain (g) with carrier density (N) in the GaAs/GaA1As d. h. laser with active-layer p-doping to 4 x 1017 cm-3 and operating at 297K. It is found that the value of Isn' should lie anywhere between -0.01 an...

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Bibliographic Details
Main Author:	Poh, B. S.
Format:	Article
Language:	English
Published:	Institusi Jurutera Malaysia 1984
Online Access:	http://psasir.upm.edu.my/id/eprint/34117/ http://psasir.upm.edu.my/id/eprint/34117/1/8.%2034117.pdf

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