Pinch-off effect in p-type double gate and single gate junctionless silicon nanowire transistor fabricated by atomic force microscopy nanolithography

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Pinch-off effect in p-type double gate and single gate junctionless silicon nanowire transistor fabricated by atomic force microscopy nanolithography

The spark of aggressive scaling of transistors was started after the Moors law on prediction of device dimensions. Recently, among the several types of transistors, junctionless transistors were considered as one of the promising alternative for new generation of nanotransistors. In this work, we in...

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Bibliographic Details
Main Authors:	Larki, Farhad, Dehzangi, Arash, Hassan, Jumiah, Abedini, Alam, Saion, Elias, Hutagalung, Sabar D., Abdullah, A. Makarimi, Hamidon, Mohd. Nizar
Format:	Article
Language:	English
Published:	Trans Tech Publications 2013
Online Access:	http://psasir.upm.edu.my/id/eprint/30403/ http://psasir.upm.edu.my/id/eprint/30403/1/Pinch.pdf

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