New technique for efficiency enhancement of film electrodes deposited by argon gas condensation from metal chalcogenide sources
This work describes a new technique to enhance photoactivity of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow. The experimental work involves controlling a number of parameters such as type of source material (SM = SnSe, Cu2SnSe...
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| Format: | Article |
| Language: | English English |
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Electrochemical Science Group
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/30371/ http://psasir.upm.edu.my/id/eprint/30371/1/New%20technique%20for%20efficiency%20enhancement%20of%20film%20electrodes%20deposited%20by%20argon%20gas%20condensation%20from%20metal%20chalcogenide%20sources.pdf |
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| author | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi |
| author_facet | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi |
| author_sort | Sabli, Nordin |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | This work describes a new technique to enhance photoactivity of metal chalcogenide-based
semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow. The experimental work involves controlling a number of parameters such as type of source material (SM = SnSe, Cu2SnSe3 and Cu2ZnSnSe4), substrate temperature (TS = room temperature RT, 100, 200, 300°C), argon gas flow rates (VA = 5, 10, 15, 25 cm3
/min) and temperature of annealing (TA= 150, 250,
350, 450 °C) under nitrogen atmosphere. The effects of varying each parameter on structural, morphological, compositional, photoresponse and optical properties of the deposited electrode were studied. The film deposited at TS = 100 °C under VA = 25 cm3/min from Cu2ZnSnSe4 (CTZSe) source showed highest photoactivity (p %) value 55.7 % compared to films deposited from SnSe (TSe) and
Cu2SnSe3 (CTSe) sources, with p % values of 8.3 % and 34.8 %, respectively. Thus, using the quaternary Cu2ZnSnSe4 compound as a source material, offered a new inroad to prepare photoactive thin film electrodes using the argon gas condensation (AGC) technique, simply by varying argon gas flow rate.
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| first_indexed | 2025-11-15T09:06:12Z |
| format | Article |
| id | upm-30371 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-15T09:06:12Z |
| publishDate | 2013 |
| publisher | Electrochemical Science Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-303712016-02-05T01:56:25Z http://psasir.upm.edu.my/id/eprint/30371/ New technique for efficiency enhancement of film electrodes deposited by argon gas condensation from metal chalcogenide sources Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi This work describes a new technique to enhance photoactivity of metal chalcogenide-based semiconductor film electrodes deposited by thermal vacuum evaporation under argon gas flow. The experimental work involves controlling a number of parameters such as type of source material (SM = SnSe, Cu2SnSe3 and Cu2ZnSnSe4), substrate temperature (TS = room temperature RT, 100, 200, 300°C), argon gas flow rates (VA = 5, 10, 15, 25 cm3 /min) and temperature of annealing (TA= 150, 250, 350, 450 °C) under nitrogen atmosphere. The effects of varying each parameter on structural, morphological, compositional, photoresponse and optical properties of the deposited electrode were studied. The film deposited at TS = 100 °C under VA = 25 cm3/min from Cu2ZnSnSe4 (CTZSe) source showed highest photoactivity (p %) value 55.7 % compared to films deposited from SnSe (TSe) and Cu2SnSe3 (CTSe) sources, with p % values of 8.3 % and 34.8 %, respectively. Thus, using the quaternary Cu2ZnSnSe4 compound as a source material, offered a new inroad to prepare photoactive thin film electrodes using the argon gas condensation (AGC) technique, simply by varying argon gas flow rate. Electrochemical Science Group 2013 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/30371/1/New%20technique%20for%20efficiency%20enhancement%20of%20film%20electrodes%20deposited%20by%20argon%20gas%20condensation%20from%20metal%20chalcogenide%20sources.pdf Sabli, Nordin and Talib, Zainal Abidin and Mat Yunus, Wan Mahmood and Zainal, Zulkarnain and Hilal, Hikmat S. and Fujii, Masatoshi (2013) New technique for efficiency enhancement of film electrodes deposited by argon gas condensation from metal chalcogenide sources. International Journal of Electrochemical Science, 8. pp. 12038-12050. ISSN 1452-3981 http://www.electrochemsci.org/list13.htm#issue11 English |
| spellingShingle | Sabli, Nordin Talib, Zainal Abidin Mat Yunus, Wan Mahmood Zainal, Zulkarnain Hilal, Hikmat S. Fujii, Masatoshi New technique for efficiency enhancement of film electrodes deposited by argon gas condensation from metal chalcogenide sources |
| title | New technique for efficiency enhancement of film electrodes
deposited by argon gas condensation from metal chalcogenide sources |
| title_full | New technique for efficiency enhancement of film electrodes
deposited by argon gas condensation from metal chalcogenide sources |
| title_fullStr | New technique for efficiency enhancement of film electrodes
deposited by argon gas condensation from metal chalcogenide sources |
| title_full_unstemmed | New technique for efficiency enhancement of film electrodes
deposited by argon gas condensation from metal chalcogenide sources |
| title_short | New technique for efficiency enhancement of film electrodes
deposited by argon gas condensation from metal chalcogenide sources |
| title_sort | new technique for efficiency enhancement of film electrodes
deposited by argon gas condensation from metal chalcogenide sources |
| url | http://psasir.upm.edu.my/id/eprint/30371/ http://psasir.upm.edu.my/id/eprint/30371/ http://psasir.upm.edu.my/id/eprint/30371/1/New%20technique%20for%20efficiency%20enhancement%20of%20film%20electrodes%20deposited%20by%20argon%20gas%20condensation%20from%20metal%20chalcogenide%20sources.pdf |