Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

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Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings

We present the results of photoluminescence (PL) measurements on a type-II GaSb/GaAs quantum dot/ring sample as a function of temperature (2 to 400 K) and over six orders of magnitude of incident laser excitation power. Optically induced charge depletion (OICD) was seen in both the wetting layer (...

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Bibliographic Details
Main Authors:	Hodgson, Peter D., Young, Robert J., Ahmad Kamarudin, Mazliana, Zhuang, Qian Dong, Hayne, Manus
Format:	Article
Language:	English English
Published:	American Physical Society 2013
Online Access:	http://psasir.upm.edu.my/id/eprint/30304/ http://psasir.upm.edu.my/id/eprint/30304/1/Hole%20migration%20and%20optically%20induced%20charge%20depletion%20in%20GaSb.pdf

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