Reaction method control of impurity scattering in C-doped MgB2: proving the role of defects besides C substitution level

Reaction method control of impurity scattering in C-doped MgB2: proving the role of defects besides C substitution level

In this study, Si and C were incorporated into polycrystalline MgB 2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40 K, ρA(40 K), is higher...

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Bibliographic Details
Main Authors: Chen, Soo Kien, Tan, Kwee Yong, Shaari, Abdul Halim, Xu, Xun, De Silva, Kaludewa Sujeewa Buddhimali, Yeoh, Wai Kong, Dou, Shi Xue, Kursumovic, Ahmed, MacManus-Driscoll, Judith L.
Format: Article
Language:English
Published: IOP Publishing 2013
Online Access:http://psasir.upm.edu.my/id/eprint/30259/
http://psasir.upm.edu.my/id/eprint/30259/1/Reaction%20method%20control%20of%20impurity%20scattering%20in%20C.pdf

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