Characterization and conduction mechanism of La5/8Sr3/8MnO3 thin films prepared by pulsed laser deposition on different substrates
The La5/8Sr3/8MnO3 (LSMO) thin films were directly grown on MgO and Si wafer substrates by Pulsed Laser Deposition (PLD) technique. The films were characterized using X-ray diffraction (XRD), field emission-scanning electron microscope (FE-SEM). The electrical and magnetic properties of films are st...
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| Format: | Article |
| Language: | English |
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Electrochemical Science Group
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/30229/ http://psasir.upm.edu.my/id/eprint/30229/1/Characterization%20and%20conduction%20mechanism%20of%20La5.pdf |
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| author | Navasery, Manizheh Shaari, Abdul Halim Bahmanrokh, Ghazaleh Haghiri, Maryam Erfani Soltani, Nayereh Dehzangi, Arash Kamalianfar, Ahmad Ud Din, Fasih Abdolmohammadi, Sanaz Chen, Soo Kien Lim, Kean Pah Mehdipour, L. A. Anuar, A. |
| author_facet | Navasery, Manizheh Shaari, Abdul Halim Bahmanrokh, Ghazaleh Haghiri, Maryam Erfani Soltani, Nayereh Dehzangi, Arash Kamalianfar, Ahmad Ud Din, Fasih Abdolmohammadi, Sanaz Chen, Soo Kien Lim, Kean Pah Mehdipour, L. A. Anuar, A. |
| author_sort | Navasery, Manizheh |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | The La5/8Sr3/8MnO3 (LSMO) thin films were directly grown on MgO and Si wafer substrates by Pulsed Laser Deposition (PLD) technique. The films were characterized using X-ray diffraction (XRD), field emission-scanning electron microscope (FE-SEM). The electrical and magnetic properties of films are studied. From the XRD patterns, the films are found polycrystalline single-phases. The highest magnetoresistance (MR) value obtained was −17.21% for LSMO/MgO film followed by −15.65% for LSMO/Si film at 80K in a 1T magnetic field. Transition temperature (TP) is 224K for LSMO/MgO and 200K for LSMO/Si film. The films exhibit a ferromagnetic transition at temperature (TC) around 363K
for LSMO/MgO and 307K for LSMO/Si film. For LSMO/MgO, the high Curie temperature such as 363K is one of the high TC in all LSMO thin films and as our knowledge, is the highest value that is reported in literature for MgO substrates with high lattice mismatch parameter. The conduction mechanisms for both films have been extensively investigated. In the metallic regime, resistivity seems to emanate from the electron–electron (major) and electron-magnon (phonon) scattering processes. For both films in the range of T >TP, the resistivity data were well fitted by both variable range hopping (VRH) and small polaron hopping (SPH) models giving higher density state, and lower activation energy and Mott temperature T0 for LSMO/Si film than those for LSMO/MgO film. The high TC such as 363K makes these LSMO/MgO films very useful for room temperature magnetic devices. |
| first_indexed | 2025-11-15T09:05:34Z |
| format | Article |
| id | upm-30229 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T09:05:34Z |
| publishDate | 2013 |
| publisher | Electrochemical Science Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-302292017-05-03T08:33:55Z http://psasir.upm.edu.my/id/eprint/30229/ Characterization and conduction mechanism of La5/8Sr3/8MnO3 thin films prepared by pulsed laser deposition on different substrates Navasery, Manizheh Shaari, Abdul Halim Bahmanrokh, Ghazaleh Haghiri, Maryam Erfani Soltani, Nayereh Dehzangi, Arash Kamalianfar, Ahmad Ud Din, Fasih Abdolmohammadi, Sanaz Chen, Soo Kien Lim, Kean Pah Mehdipour, L. A. Anuar, A. The La5/8Sr3/8MnO3 (LSMO) thin films were directly grown on MgO and Si wafer substrates by Pulsed Laser Deposition (PLD) technique. The films were characterized using X-ray diffraction (XRD), field emission-scanning electron microscope (FE-SEM). The electrical and magnetic properties of films are studied. From the XRD patterns, the films are found polycrystalline single-phases. The highest magnetoresistance (MR) value obtained was −17.21% for LSMO/MgO film followed by −15.65% for LSMO/Si film at 80K in a 1T magnetic field. Transition temperature (TP) is 224K for LSMO/MgO and 200K for LSMO/Si film. The films exhibit a ferromagnetic transition at temperature (TC) around 363K for LSMO/MgO and 307K for LSMO/Si film. For LSMO/MgO, the high Curie temperature such as 363K is one of the high TC in all LSMO thin films and as our knowledge, is the highest value that is reported in literature for MgO substrates with high lattice mismatch parameter. The conduction mechanisms for both films have been extensively investigated. In the metallic regime, resistivity seems to emanate from the electron–electron (major) and electron-magnon (phonon) scattering processes. For both films in the range of T >TP, the resistivity data were well fitted by both variable range hopping (VRH) and small polaron hopping (SPH) models giving higher density state, and lower activation energy and Mott temperature T0 for LSMO/Si film than those for LSMO/MgO film. The high TC such as 363K makes these LSMO/MgO films very useful for room temperature magnetic devices. Electrochemical Science Group 2013 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/30229/1/Characterization%20and%20conduction%20mechanism%20of%20La5.pdf Navasery, Manizheh and Shaari, Abdul Halim and Bahmanrokh, Ghazaleh and Haghiri, Maryam Erfani and Soltani, Nayereh and Dehzangi, Arash and Kamalianfar, Ahmad and Ud Din, Fasih and Abdolmohammadi, Sanaz and Chen, Soo Kien and Lim, Kean Pah and Mehdipour, L. A. and Anuar, A. (2013) Characterization and conduction mechanism of La5/8Sr3/8MnO3 thin films prepared by pulsed laser deposition on different substrates. International Journal of Electrochemical Science, 8 (5). pp. 6905-6921. ISSN 1452-3981 http://www.electrochemsci.org/list13.htm#issue5 |
| spellingShingle | Navasery, Manizheh Shaari, Abdul Halim Bahmanrokh, Ghazaleh Haghiri, Maryam Erfani Soltani, Nayereh Dehzangi, Arash Kamalianfar, Ahmad Ud Din, Fasih Abdolmohammadi, Sanaz Chen, Soo Kien Lim, Kean Pah Mehdipour, L. A. Anuar, A. Characterization and conduction mechanism of La5/8Sr3/8MnO3 thin films prepared by pulsed laser deposition on different substrates |
| title | Characterization and conduction mechanism of La5/8Sr3/8MnO3
thin films prepared by pulsed laser deposition on different
substrates |
| title_full | Characterization and conduction mechanism of La5/8Sr3/8MnO3
thin films prepared by pulsed laser deposition on different
substrates |
| title_fullStr | Characterization and conduction mechanism of La5/8Sr3/8MnO3
thin films prepared by pulsed laser deposition on different
substrates |
| title_full_unstemmed | Characterization and conduction mechanism of La5/8Sr3/8MnO3
thin films prepared by pulsed laser deposition on different
substrates |
| title_short | Characterization and conduction mechanism of La5/8Sr3/8MnO3
thin films prepared by pulsed laser deposition on different
substrates |
| title_sort | characterization and conduction mechanism of la5/8sr3/8mno3
thin films prepared by pulsed laser deposition on different
substrates |
| url | http://psasir.upm.edu.my/id/eprint/30229/ http://psasir.upm.edu.my/id/eprint/30229/ http://psasir.upm.edu.my/id/eprint/30229/1/Characterization%20and%20conduction%20mechanism%20of%20La5.pdf |