Design and fabrication of silicon nanowire based sensor
This paper reports the process development of silicon nanowires sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator (SOI) wafer as a starting material, the nanowires is fabricated using a top-down approach which...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
Electrochemical Science Group
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/30181/ http://psasir.upm.edu.my/id/eprint/30181/1/Design%20and%20fabrication%20of%20silicon%20nanowire%20based%20sensor.pdf |
| _version_ | 1848846604685017088 |
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| author | Abd Rahman, Siti Fatimah Yusof, Nor Azah Hashim, Uda Md Nor, M. Nuzaihan |
| author_facet | Abd Rahman, Siti Fatimah Yusof, Nor Azah Hashim, Uda Md Nor, M. Nuzaihan |
| author_sort | Abd Rahman, Siti Fatimah |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | This paper reports the process development of silicon nanowires sensor requires both the fabrication of
nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator
(SOI) wafer as a starting material, the nanowires is fabricated using a top-down approach which
involved Scanning Electron Microscope based Electron Beam Lithography method. The silicon
nanowires are well developed with the smallest dimension is 65nm in width. The effect of line width
and exposure dose on the pattern structure is investigated experimentally using the negative photoresist
ma-N2403 for EBL. The exposure doses for the resist layer are varied in the range of 50µC/cm2 to
180µC/cm2 at 20 kV accelerating voltage with a beam current of 0.075nA. The nanowires resist masks
are well developed with dimension less than 100 nm in width for the dose exposure parameters of
80µC/cm2, 100µC/cm2 and 120µC/cm2. Subsequently, the two metal electrodes which are designated
as source and drain are fabricated on top of individual nanowire using conventional lithography
process. Morphological, electrical and chemical characteristics have been proposed to verify the
outcome of the fabricated device. Finally, the fabricated device is performed as pH level detection.
Three types of standard aqueous pH buffer buffer solutions which are pH 4, pH 7 and pH 10 are used
to test the electrical response of the device. The SiNWs sensor show the highest resistance value for
pH 4 and the lowest resistance value for pH 10. In terms of sensitivity, the device with smaller
nanowire is found to be more sensitive than larger nanowire as a result of the high surface-to-volume
ratio. |
| first_indexed | 2025-11-15T09:05:21Z |
| format | Article |
| id | upm-30181 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-15T09:05:21Z |
| publishDate | 2013 |
| publisher | Electrochemical Science Group |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-301812015-09-09T02:46:09Z http://psasir.upm.edu.my/id/eprint/30181/ Design and fabrication of silicon nanowire based sensor Abd Rahman, Siti Fatimah Yusof, Nor Azah Hashim, Uda Md Nor, M. Nuzaihan This paper reports the process development of silicon nanowires sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator (SOI) wafer as a starting material, the nanowires is fabricated using a top-down approach which involved Scanning Electron Microscope based Electron Beam Lithography method. The silicon nanowires are well developed with the smallest dimension is 65nm in width. The effect of line width and exposure dose on the pattern structure is investigated experimentally using the negative photoresist ma-N2403 for EBL. The exposure doses for the resist layer are varied in the range of 50µC/cm2 to 180µC/cm2 at 20 kV accelerating voltage with a beam current of 0.075nA. The nanowires resist masks are well developed with dimension less than 100 nm in width for the dose exposure parameters of 80µC/cm2, 100µC/cm2 and 120µC/cm2. Subsequently, the two metal electrodes which are designated as source and drain are fabricated on top of individual nanowire using conventional lithography process. Morphological, electrical and chemical characteristics have been proposed to verify the outcome of the fabricated device. Finally, the fabricated device is performed as pH level detection. Three types of standard aqueous pH buffer buffer solutions which are pH 4, pH 7 and pH 10 are used to test the electrical response of the device. The SiNWs sensor show the highest resistance value for pH 4 and the lowest resistance value for pH 10. In terms of sensitivity, the device with smaller nanowire is found to be more sensitive than larger nanowire as a result of the high surface-to-volume ratio. Electrochemical Science Group 2013 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/30181/1/Design%20and%20fabrication%20of%20silicon%20nanowire%20based%20sensor.pdf Abd Rahman, Siti Fatimah and Yusof, Nor Azah and Hashim, Uda and Md Nor, M. Nuzaihan (2013) Design and fabrication of silicon nanowire based sensor. International Journal of Electrochemical Science, 8 (9). pp. 10946-10960. ISSN 1452-3981 http://www.electrochemsci.org/list13.htm#issue9 English |
| spellingShingle | Abd Rahman, Siti Fatimah Yusof, Nor Azah Hashim, Uda Md Nor, M. Nuzaihan Design and fabrication of silicon nanowire based sensor |
| title | Design and fabrication of silicon nanowire based sensor |
| title_full | Design and fabrication of silicon nanowire based sensor |
| title_fullStr | Design and fabrication of silicon nanowire based sensor |
| title_full_unstemmed | Design and fabrication of silicon nanowire based sensor |
| title_short | Design and fabrication of silicon nanowire based sensor |
| title_sort | design and fabrication of silicon nanowire based sensor |
| url | http://psasir.upm.edu.my/id/eprint/30181/ http://psasir.upm.edu.my/id/eprint/30181/ http://psasir.upm.edu.my/id/eprint/30181/1/Design%20and%20fabrication%20of%20silicon%20nanowire%20based%20sensor.pdf |