Reactive ion etching of 4H-SiC using SF6/O2 for MEMS application

Reactive ion etching of 4H-SiC using SF6/O2 for MEMS application

Deep Reactive Ion Etching (DRIE) of 4H-SiC performed using SF6/O2 plasma. The etching rates investigated as a function of the ratio of the O2 flow rate to total gas flow rate under different etching conditions such as the effect of power density, temperature, and the combination of chemistries on et...

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Bibliographic Details
Main Authors: Hezarjaribi, Yadollah, Hamidon, Mohd Nizar
Format: Article
Language:English
Published: 2013
Online Access:http://psasir.upm.edu.my/id/eprint/28742/
http://psasir.upm.edu.my/id/eprint/28742/1/Reactive%20ion%20etching%20of%204H.pdf

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