Electrical transport and magnetic properties of MgB2 reacted with Si and C
SiC is among the promising dopants which can be used to increase the critical current density of MgB2 superconductor up to the level required for producing high magnetic field. In this work, we are motivated to study how Si and C influence the electromagnetic properties of bulk MgB2 prepared by reac...
| Main Authors: | , , , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English English |
| Published: |
2013
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| Online Access: | http://psasir.upm.edu.my/id/eprint/27204/ http://psasir.upm.edu.my/id/eprint/27204/1/10_20130925151900.pdf http://psasir.upm.edu.my/id/eprint/27204/7/ID%2027204.pdf |
| _version_ | 1848845781585362944 |
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| author | Chen, Soo Kien Tan, Kwee Yong Shaari, Abdul Halim Xu, Xun De Silva, S. Yeoh, Wai Kong Dou, Shi Xue Kursumovic, Ahmed MacManus-Driscoll, Judith L. |
| author_facet | Chen, Soo Kien Tan, Kwee Yong Shaari, Abdul Halim Xu, Xun De Silva, S. Yeoh, Wai Kong Dou, Shi Xue Kursumovic, Ahmed MacManus-Driscoll, Judith L. |
| author_sort | Chen, Soo Kien |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | SiC is among the promising dopants which can be used to increase the critical current density of MgB2 superconductor up to the level required for producing high magnetic field. In this work, we are motivated to study how Si and C influence the electromagnetic properties of bulk MgB2 prepared by reacting the material with SiC or combination of Si and C elements (Si+C). While there is no significant change in the e-axis lattice parameter, the a-axis is smaller compared with that of the pure sample indicating substitution of C on the B site. The C substitution level was estimated based on the relative
change of c with respect to a (c1a). By varying the sintering temperature, the C substitution level is different between the samples reacted with SiC and {Si+C) despite their superconducting transition temperature is close to each other. The upper critical fields were determined from the temperature and magnetic field dependence of resistive transition. These results together with the inductive critical current density were correlated to the resistivity properties and C substitution. |
| first_indexed | 2025-11-15T08:52:16Z |
| format | Conference or Workshop Item |
| id | upm-27204 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English English |
| last_indexed | 2025-11-15T08:52:16Z |
| publishDate | 2013 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-272042016-11-30T04:12:11Z http://psasir.upm.edu.my/id/eprint/27204/ Electrical transport and magnetic properties of MgB2 reacted with Si and C Chen, Soo Kien Tan, Kwee Yong Shaari, Abdul Halim Xu, Xun De Silva, S. Yeoh, Wai Kong Dou, Shi Xue Kursumovic, Ahmed MacManus-Driscoll, Judith L. SiC is among the promising dopants which can be used to increase the critical current density of MgB2 superconductor up to the level required for producing high magnetic field. In this work, we are motivated to study how Si and C influence the electromagnetic properties of bulk MgB2 prepared by reacting the material with SiC or combination of Si and C elements (Si+C). While there is no significant change in the e-axis lattice parameter, the a-axis is smaller compared with that of the pure sample indicating substitution of C on the B site. The C substitution level was estimated based on the relative change of c with respect to a (c1a). By varying the sintering temperature, the C substitution level is different between the samples reacted with SiC and {Si+C) despite their superconducting transition temperature is close to each other. The upper critical fields were determined from the temperature and magnetic field dependence of resistive transition. These results together with the inductive critical current density were correlated to the resistivity properties and C substitution. 2013-07-14 Conference or Workshop Item NonPeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/27204/1/10_20130925151900.pdf application/pdf en http://psasir.upm.edu.my/id/eprint/27204/7/ID%2027204.pdf Chen, Soo Kien and Tan, Kwee Yong and Shaari, Abdul Halim and Xu, Xun and De Silva, S. and Yeoh, Wai Kong and Dou, Shi Xue and Kursumovic, Ahmed and MacManus-Driscoll, Judith L. (2013) Electrical transport and magnetic properties of MgB2 reacted with Si and C. In: International Conference on Magnet Technology, 14-19 July 2013, Boston, USA. . (Unpublished) |
| spellingShingle | Chen, Soo Kien Tan, Kwee Yong Shaari, Abdul Halim Xu, Xun De Silva, S. Yeoh, Wai Kong Dou, Shi Xue Kursumovic, Ahmed MacManus-Driscoll, Judith L. Electrical transport and magnetic properties of MgB2 reacted with Si and C |
| title | Electrical transport and magnetic properties of MgB2 reacted
with Si and C |
| title_full | Electrical transport and magnetic properties of MgB2 reacted
with Si and C |
| title_fullStr | Electrical transport and magnetic properties of MgB2 reacted
with Si and C |
| title_full_unstemmed | Electrical transport and magnetic properties of MgB2 reacted
with Si and C |
| title_short | Electrical transport and magnetic properties of MgB2 reacted
with Si and C |
| title_sort | electrical transport and magnetic properties of mgb2 reacted
with si and c |
| url | http://psasir.upm.edu.my/id/eprint/27204/ http://psasir.upm.edu.my/id/eprint/27204/1/10_20130925151900.pdf http://psasir.upm.edu.my/id/eprint/27204/7/ID%2027204.pdf |