Study the characteristic of p-type junction-less side gate silicon nanowire transistor fabricated by atomic force microscopy lithography

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Study the characteristic of p-type junction-less side gate silicon nanowire transistor fabricated by atomic force microscopy lithography

Problem statement: Nanotransistor now is one of the most promising fields in nanoelectronic in order to less energy consuming and application to create developed programmable information processors. Most of Computing and communications companies invest hundreds of millions of dollars in research fun...

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Bibliographic Details
Main Authors:	Dehzangi, Arash, Larki, Farhad, Saion, Elias, Hatagalung, Sabar D., Abdullah, Ahmad Makarimi, Hamidon, Mohd Nizar, Hassan, Jumiah
Format:	Article
Language:	English
Published:	Science Publications 2011
Online Access:	http://psasir.upm.edu.my/id/eprint/25031/ http://psasir.upm.edu.my/id/eprint/25031/1/ajassp.2011.872.877.pdf

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