APA (7th ed.) Citation

Dehzangi, A., Larki, F., Saion, E., Hatagalung, S. D., Abdullah, A. M., Hamidon, M. N., & Hassan, J. (2011). Study the characteristic of p-type junction-less side gate silicon nanowire transistor fabricated by atomic force microscopy lithography. Science Publications.

Chicago Style (17th ed.) Citation

Dehzangi, Arash, Farhad Larki, Elias Saion, Sabar D. Hatagalung, Ahmad Makarimi Abdullah, Mohd Nizar Hamidon, and Jumiah Hassan. Study the Characteristic of P-type Junction-less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography. Science Publications, 2011.

MLA (9th ed.) Citation

Dehzangi, Arash, et al. Study the Characteristic of P-type Junction-less Side Gate Silicon Nanowire Transistor Fabricated by Atomic Force Microscopy Lithography. Science Publications, 2011.