Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

QR Code

Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings

Type-II self-assembled GaSb/GaAs nanostructures have been grown by molecular-beam epitaxy and studied by atomic-force microscopy, transmission electron microscopy, and power-dependent magnetophotoluminescence. Nanostructures on the sample surface are found to be entirely dotlike, while capped nanost...

Full description

Bibliographic Details
Main Authors:	Ahmad Kamarudin, Mazliana, Hayne, Manus, Young, Robert J., Zhuang, Qian Dong, Ben, Teresa, Molina, Sergio I.
Format:	Article
Language:	English
Published:	American Physical Society 2011
Online Access:	http://psasir.upm.edu.my/id/eprint/24802/ http://psasir.upm.edu.my/id/eprint/24802/1/Tuning%20the%20properties%20of%20exciton%20complexes%20in%20self.pdf

Similar Items

Hole migration and optically induced charge depletion in GaSb/GaAs wetting layers and quantum rings
by: Hodgson, Peter D., et al.
Published: (2013)

Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
by: Fernández-Delgado, Natalia, et al.
Published: (2017)

Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/ GaAs quantum dots
by: Delgado, N. Fernandez, et al.
Published: (2016)

Some aspects of the field evaporation behaviour of GaSb
by: Müller, M., et al.
Published: (2011)

Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
by: Prando, G.A., et al.
Published: (2018)

Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
by: Bhunia, Amit, et al.
Published: (2018)

Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
by: Gordo, V. Orsi, et al.
Published: (2017)

Distribution of ga vacancies in Zn diffused GaAs
by: Zahari Mohamed Darus,, et al.
Published: (1992)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)

The electron-phonon interaction in GaAs/(AlGa)As quantum wells
by: Cross, Andrew John
Published: (2001)

Nanoscale characterisation of MBE-grown GaMnN / (001) GaAs
by: Fay, Mike W., et al.
Published: (2008)

Experimental Study Of InGaP/GaAs DHBTS With Composite Collector
by: Poh, Zi-Song
Published: (2009)

Self-healing in fractured GaAs nanowires
by: Wang, Jun, et al.
Published: (2012)

Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots
by: Wahab, Yussof, et al.
Published: (2006)

Conversion Efficiency Improvement in GaAs Solar Cells
by: Das, Narottam, et al.
Published: (2014)

Self-healing of GaAs nanowires: An atomistic study
by: Wang, Jun, et al.
Published: (2012)

Thermal stablity of heavily carbon-doped GaAs
by: Meng , Suan Uang, et al.
Published: (2004)

Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation
by: Ahmad Fauzi, Dhiyauddin, et al.
Published: (2013)

Study Of Cubic GaN On Porous GaAs Substrate For High Efficient Energy Devices.
by: Zainal, Norzaini
Published: (2016)

Modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device
by: Parimon, Norfarariyanti, et al.
Published: (2008)

Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
by: Rodrigues, D.H., et al.
Published: (2016)

Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors
by: Poh, Z. S., et al.
Published: (2007)

An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode
by: Maricar, Mohamed Ismaeel, et al.
Published: (2018)

Dual-wavelength generation with terahertz spacing using GaAs–AlGaAs microring resonator waveguides
by: Sarrigani, G. V., et al.
Published: (2017)

An analysis of the electron trajectory in the vicinity of GaAs quantum dot
by: Hanafi Ithnin,, et al.
Published: (2014)

Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN
by: Eßer, F., et al.
Published: (2016)

Structural characterisation of MBE grown zinc-blende Ga1-xMnxN/GaAs(001) as a function of Ga flux
by: Han, Y., et al.
Published: (2005)

Avalanche Multiplication and Excess Noise in Thin Heterojunction AlxGa1_xAs/GaAs Avalanche Photodiodes
by: Low, Lay Chen
Published: (2010)

Output power limitations and improvements in passively mode locked GaAs/AlGaAs quantum well lasers
by: Tandoi, G., et al.
Published: (2012)

Electrical properties of neutron-irradiated silicon and GaAs commercial diodes
by: Che Omar, Nuurul Iffah, et al.
Published: (2012)

Photoluminescence and raman scattering of GaAs1-xBix alloy
by: L. Hasanah,, et al.
Published: (2020)

Size-dependent brittle-to-ductile transition in GaAs nano-rods
by: Wang, J., et al.
Published: (2014)

Optimal Nano-Dimensional Channel of GaAs-FinFET Transistor
by: Mahmood, Ahmed, et al.
Published: (2018)

Optimal nano dimensional channel of GaAs-FinFET transistor
by: Ahmed, Mahmood, et al.
Published: (2018)

GaAs PHEMT single-ended mixers for 28 GHz applications
by: Rahman, Nuriha Abd, et al.
Published: (2004)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
by: Roslan, Sharizar, et al.
Published: (2006)

Quantitative estimates of the variations of refractive index and gain with carrier density in GaAs/GaAIAs semiconductor injection lasers
by: Poh, B. S.
Published: (1984)

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
by: Filali, Walid, et al.
Published: (2017)

Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor
by: Faris Azim Ahmad Fajri, Faris Azim, et al.
Published: (2021)