Electrical performance of 0.5 µm MOSFET on bond-and-etch-back silicon-on-insulator(BESOI) substrate

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Electrical performance of 0.5 µm MOSFET on bond-and-etch-back silicon-on-insulator(BESOI) substrate

0.5 µm gate length MOSFET is fabricated on Bond-and-Etch-Back Silicon-On-Insulator (BESOI) substrate using bulk CMOS technology. For the purpose of silicon layer thickness adjustment, sacrificial oxidation is implemented on the device layer of 1.5 ± 0.5 µm device layer and 2 µm buried oxide thicknes...

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Bibliographic Details
Main Authors:	Abdullah, Wan Fazlida Hanim, Mohd Sidek, Roslina, Mohd Saari, Shahrul Aman, Ahmad, Mohd Rais
Format:	Conference or Workshop Item
Language:	English
Published:	2002
Online Access:	http://psasir.upm.edu.my/id/eprint/18493/ http://psasir.upm.edu.my/id/eprint/18493/1/18493.pdf

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