Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.

The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc selenide (ZnSe) is observed deep inside the crystal. Two types of defects can be detected based on the s...

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Main Authors: Mohd Noor, Ahmad Shukri, Miyakawa, Atsuo, Kawata, Yoshimasa, Torizawa, Makoto
Format: Article
Language:English
English
Published: American Institute of Physics Inc. 2008
Online Access:http://psasir.upm.edu.my/id/eprint/17504/
http://psasir.upm.edu.my/id/eprint/17504/1/Two.pdf
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author Mohd Noor, Ahmad Shukri
Miyakawa, Atsuo
Kawata, Yoshimasa
Torizawa, Makoto
author_facet Mohd Noor, Ahmad Shukri
Miyakawa, Atsuo
Kawata, Yoshimasa
Torizawa, Makoto
author_sort Mohd Noor, Ahmad Shukri
building UPM Institutional Repository
collection Online Access
description The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc selenide (ZnSe) is observed deep inside the crystal. Two types of defects can be detected based on the spectral luminescence image. One type of defect can be seen in the entire spectrum images. Meanwhile, other types of defects can only be observed at higher energy of the spectrum, from 460 to 465 nm. This study represents works of identifying crystals defect in wide gap materials by two-photon luminescence technique.
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language English
English
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publishDate 2008
publisher American Institute of Physics Inc.
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spelling upm-175042015-10-26T01:15:32Z http://psasir.upm.edu.my/id/eprint/17504/ Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals. Mohd Noor, Ahmad Shukri Miyakawa, Atsuo Kawata, Yoshimasa Torizawa, Makoto The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc selenide (ZnSe) is observed deep inside the crystal. Two types of defects can be detected based on the spectral luminescence image. One type of defect can be seen in the entire spectrum images. Meanwhile, other types of defects can only be observed at higher energy of the spectrum, from 460 to 465 nm. This study represents works of identifying crystals defect in wide gap materials by two-photon luminescence technique. American Institute of Physics Inc. 2008 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/17504/1/Two.pdf Mohd Noor, Ahmad Shukri and Miyakawa, Atsuo and Kawata, Yoshimasa and Torizawa, Makoto (2008) Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals. Applied Physics Letters, 92 (16). ISSN 0003-6951; ESSN: 1077-3118 10.1063/1.2913760 English
spellingShingle Mohd Noor, Ahmad Shukri
Miyakawa, Atsuo
Kawata, Yoshimasa
Torizawa, Makoto
Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
title Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
title_full Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
title_fullStr Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
title_full_unstemmed Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
title_short Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
title_sort two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals.
url http://psasir.upm.edu.my/id/eprint/17504/
http://psasir.upm.edu.my/id/eprint/17504/
http://psasir.upm.edu.my/id/eprint/17504/1/Two.pdf