Preparation and characterization of chemically deposited Cu4SnS4 thin films

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Preparation and characterization of chemically deposited Cu4SnS4 thin films

Thin films of Cu4SnS4 were grown by chemical bath deposition technique. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (pH 1.5) were optimized to obtain good quality of films. The thin films were characterized usi...

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Bibliographic Details
Main Authors:	Kassim, Anuar, Tan, Wee Tee, Mohd Sharif, Atan
Format:	Article
Language:	English
Published:	Ultra Scientist Group of Journals 2009
Online Access:	http://psasir.upm.edu.my/id/eprint/16308/ http://psasir.upm.edu.my/id/eprint/16308/1/Preparation%20and%20characterization%20of%20chemically%20deposited%20Cu4SnS4%20thin%20films.pdf

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