Preparation and characterization of chemically deposited Cu4SnS4 thin films
Thin films of Cu4SnS4 were grown by chemical bath deposition technique. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (pH 1.5) were optimized to obtain good quality of films. The thin films were characterized usi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Ultra Scientist Group of Journals
2009
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| Online Access: | http://psasir.upm.edu.my/id/eprint/16308/ http://psasir.upm.edu.my/id/eprint/16308/1/Preparation%20and%20characterization%20of%20chemically%20deposited%20Cu4SnS4%20thin%20films.pdf |
| _version_ | 1848842925002194944 |
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| author | Kassim, Anuar Tan, Wee Tee Mohd Sharif, Atan |
| author_facet | Kassim, Anuar Tan, Wee Tee Mohd Sharif, Atan |
| author_sort | Kassim, Anuar |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | Thin films of Cu4SnS4 were grown by chemical bath deposition technique. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (pH 1.5) were optimized to obtain good quality of films. The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and surface morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. The X-ray diffraction analysis showed the presence of polycrystalline in nature and the most intense peak occurred at 2q = 30.2° which belongs to (221) plane of Cu4SnS4. Atomic force microscopy image reveals that grains are uniformly distributed over the surface of substrate. An optical absorption study shows the presence of direct transition with band gap energy of 1.6 eV. |
| first_indexed | 2025-11-15T08:06:52Z |
| format | Article |
| id | upm-16308 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T08:06:52Z |
| publishDate | 2009 |
| publisher | Ultra Scientist Group of Journals |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-163082015-09-28T02:41:32Z http://psasir.upm.edu.my/id/eprint/16308/ Preparation and characterization of chemically deposited Cu4SnS4 thin films Kassim, Anuar Tan, Wee Tee Mohd Sharif, Atan Thin films of Cu4SnS4 were grown by chemical bath deposition technique. The deposition parameters such as bath temperature (50 °C), deposition time (120 min), electrolyte concentration (0.05 M) and bath pH (pH 1.5) were optimized to obtain good quality of films. The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and surface morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. The X-ray diffraction analysis showed the presence of polycrystalline in nature and the most intense peak occurred at 2q = 30.2° which belongs to (221) plane of Cu4SnS4. Atomic force microscopy image reveals that grains are uniformly distributed over the surface of substrate. An optical absorption study shows the presence of direct transition with band gap energy of 1.6 eV. Ultra Scientist Group of Journals 2009 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/16308/1/Preparation%20and%20characterization%20of%20chemically%20deposited%20Cu4SnS4%20thin%20films.pdf Kassim, Anuar and Tan, Wee Tee and Mohd Sharif, Atan (2009) Preparation and characterization of chemically deposited Cu4SnS4 thin films. Journal of Ultra Chemistry, 5 (2). ISSN 0973-3450 http://ultrascientist.org/juc/abs_vol5%281%29/index.htm |
| spellingShingle | Kassim, Anuar Tan, Wee Tee Mohd Sharif, Atan Preparation and characterization of chemically deposited Cu4SnS4 thin films |
| title | Preparation and characterization of chemically deposited Cu4SnS4 thin films |
| title_full | Preparation and characterization of chemically deposited Cu4SnS4 thin films |
| title_fullStr | Preparation and characterization of chemically deposited Cu4SnS4 thin films |
| title_full_unstemmed | Preparation and characterization of chemically deposited Cu4SnS4 thin films |
| title_short | Preparation and characterization of chemically deposited Cu4SnS4 thin films |
| title_sort | preparation and characterization of chemically deposited cu4sns4 thin films |
| url | http://psasir.upm.edu.my/id/eprint/16308/ http://psasir.upm.edu.my/id/eprint/16308/ http://psasir.upm.edu.my/id/eprint/16308/1/Preparation%20and%20characterization%20of%20chemically%20deposited%20Cu4SnS4%20thin%20films.pdf |