Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique
The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respec...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Multidisciplinary Digital Publishing Institute
2009
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| Online Access: | http://psasir.upm.edu.my/id/eprint/15828/ |
| _version_ | 1848842788612866048 |
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| author | Shafie, Suhaidi Kawahito, Shoji Abdul Halin, Izhal Wan Hassan, Wan Zuha |
| author_facet | Shafie, Suhaidi Kawahito, Shoji Abdul Halin, Izhal Wan Hassan, Wan Zuha |
| author_sort | Shafie, Suhaidi |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respect to the incident light. In this paper, an analysis of the non-linearity in partial charge transfer technique has been carried, and the relationship between dynamic range and the non-linearity is studied. The results show that the non-linearity is caused by two factors, namely the current diffusion, which has an exponential relation with the potential barrier, and the initial condition of photodiodes in which it shows that the error in the high illumination region increases as the ratio of the long to the short accumulation time raises. Moreover, the increment of the saturation level of photodiodes also increases the error in the high illumination region. |
| first_indexed | 2025-11-15T08:04:42Z |
| format | Article |
| id | upm-15828 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T08:04:42Z |
| publishDate | 2009 |
| publisher | Multidisciplinary Digital Publishing Institute |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-158282014-12-25T09:39:46Z http://psasir.upm.edu.my/id/eprint/15828/ Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique Shafie, Suhaidi Kawahito, Shoji Abdul Halin, Izhal Wan Hassan, Wan Zuha The partial charge transfer technique can expand the dynamic range of a CMOS image sensor by synthesizing two types of signal, namely the long and short accumulation time signals. However the short accumulation time signal obtained from partial transfer operation suffers of non-linearity with respect to the incident light. In this paper, an analysis of the non-linearity in partial charge transfer technique has been carried, and the relationship between dynamic range and the non-linearity is studied. The results show that the non-linearity is caused by two factors, namely the current diffusion, which has an exponential relation with the potential barrier, and the initial condition of photodiodes in which it shows that the error in the high illumination region increases as the ratio of the long to the short accumulation time raises. Moreover, the increment of the saturation level of photodiodes also increases the error in the high illumination region. Multidisciplinary Digital Publishing Institute 2009-11-26 Article PeerReviewed Shafie, Suhaidi and Kawahito, Shoji and Abdul Halin, Izhal and Wan Hassan, Wan Zuha (2009) Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique. Sensors, 9 (12). pp. 9452-9467. ISSN 1424-8220 http://www.mdpi.com/1424-8220/9/12/9452 10.3390/s91209452 English |
| spellingShingle | Shafie, Suhaidi Kawahito, Shoji Abdul Halin, Izhal Wan Hassan, Wan Zuha Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique |
| title | Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique |
| title_full | Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique |
| title_fullStr | Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique |
| title_full_unstemmed | Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique |
| title_short | Non-linearity in wide dynamic range CMOS image sensors utilizing a partial charge transfer technique |
| title_sort | non-linearity in wide dynamic range cmos image sensors utilizing a partial charge transfer technique |
| url | http://psasir.upm.edu.my/id/eprint/15828/ http://psasir.upm.edu.my/id/eprint/15828/ http://psasir.upm.edu.my/id/eprint/15828/ |