Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3 Our...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2017
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| Online Access: | http://psasir.upm.edu.my/id/eprint/15114/ http://psasir.upm.edu.my/id/eprint/15114/1/Effect%20of%20an%20in-situ%20thermal%20annealing%20on%20the%20structural%20properties%20of%20self-assembled%20GaSbGaAs%20quantum%20dots.pdf |
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| author | Fernández-Delgado, Natalia Collado, Miriam Herrera Chisholm, Matthew F. Ahmad Kamarudin, Mazliana Zhuang, Qian Dong Hayne, Manus Molina, Sergio I. |
| author_facet | Fernández-Delgado, Natalia Collado, Miriam Herrera Chisholm, Matthew F. Ahmad Kamarudin, Mazliana Zhuang, Qian Dong Hayne, Manus Molina, Sergio I. |
| author_sort | Fernández-Delgado, Natalia |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3 Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed. |
| first_indexed | 2025-11-15T08:01:29Z |
| format | Article |
| id | upm-15114 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T08:01:29Z |
| publishDate | 2017 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-151142019-05-09T01:25:06Z http://psasir.upm.edu.my/id/eprint/15114/ Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots Fernández-Delgado, Natalia Collado, Miriam Herrera Chisholm, Matthew F. Ahmad Kamarudin, Mazliana Zhuang, Qian Dong Hayne, Manus Molina, Sergio I. In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)1 is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)2 and electron energy loss spectroscopy (EELS)3 Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed. Elsevier 2017 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/15114/1/Effect%20of%20an%20in-situ%20thermal%20annealing%20on%20the%20structural%20properties%20of%20self-assembled%20GaSbGaAs%20quantum%20dots.pdf Fernández-Delgado, Natalia and Collado, Miriam Herrera and Chisholm, Matthew F. and Ahmad Kamarudin, Mazliana and Zhuang, Qian Dong and Hayne, Manus and Molina, Sergio I. (2017) Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots. Applied Surface Science, 395. pp. 136-139. ISSN 0169-4332; ESSN: 1873-5584 https://www.sciencedirect.com/science/article/pii/S016943321630914X#! 10.1016/j.apsusc.2016.04.131 |
| spellingShingle | Fernández-Delgado, Natalia Collado, Miriam Herrera Chisholm, Matthew F. Ahmad Kamarudin, Mazliana Zhuang, Qian Dong Hayne, Manus Molina, Sergio I. Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots |
| title | Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots |
| title_full | Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots |
| title_fullStr | Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots |
| title_full_unstemmed | Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots |
| title_short | Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots |
| title_sort | effect of an in-situ thermal annealing on the structural properties of self-assembled gasb/gaas quantum dots |
| url | http://psasir.upm.edu.my/id/eprint/15114/ http://psasir.upm.edu.my/id/eprint/15114/ http://psasir.upm.edu.my/id/eprint/15114/ http://psasir.upm.edu.my/id/eprint/15114/1/Effect%20of%20an%20in-situ%20thermal%20annealing%20on%20the%20structural%20properties%20of%20self-assembled%20GaSbGaAs%20quantum%20dots.pdf |