Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films

Cu4SnS4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer....

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Main Authors: Kassim, Anuar, Nagalingam, Saravanan, Tan, Wee Tee, Ho, Soon Min
Format: Article
Language:English
Published: Sociedad Química del Perú 2010
Online Access:http://psasir.upm.edu.my/id/eprint/14360/
http://psasir.upm.edu.my/id/eprint/14360/1/Effects%20of%20deposition%20period%20on%20the%20chemical%20bath%20deposited%20Cu4SnS4%20thin%20films.pdf
_version_ 1848842372080730112
author Kassim, Anuar
Nagalingam, Saravanan
Tan, Wee Tee
Ho, Soon Min
author_facet Kassim, Anuar
Nagalingam, Saravanan
Tan, Wee Tee
Ho, Soon Min
author_sort Kassim, Anuar
building UPM Institutional Repository
collection Online Access
description Cu4SnS4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions.
first_indexed 2025-11-15T07:58:05Z
format Article
id upm-14360
institution Universiti Putra Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T07:58:05Z
publishDate 2010
publisher Sociedad Química del Perú
recordtype eprints
repository_type Digital Repository
spelling upm-143602019-04-08T08:33:59Z http://psasir.upm.edu.my/id/eprint/14360/ Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films Kassim, Anuar Nagalingam, Saravanan Tan, Wee Tee Ho, Soon Min Cu4SnS4 thin films were prepared by simple chemical bath deposition technique. The influence of deposition period on the structural, morphological and optical properties of films was studied. The films were characterized using X-ray diffraction, atomic force microscopy and UV-Vis Spectrophotometer. X-ray diffraction patterns indicated that the films were polycrystalline with prominent peak attributed to (221) plane of orthorhombic crystal structure. The films prepared at 80 min showed significant increased in the intensity of all diffractions. According to AFM images, these films indicated that the surface of substrate was covered completely. The obtained films also produced higher absorption characteristics when compared to the films prepared at other deposition periods based on optical absorption studies. The band gap values of films deposited at different deposition periods were in the range of 1.6-2.1 eV. Deposition for 80 min was found to be the optimum condition to produce good quality thin films under the current conditions. Sociedad Química del Perú 2010 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/14360/1/Effects%20of%20deposition%20period%20on%20the%20chemical%20bath%20deposited%20Cu4SnS4%20thin%20films.pdf Kassim, Anuar and Nagalingam, Saravanan and Tan, Wee Tee and Ho, Soon Min (2010) Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films. Revista de la Sociedad Química del Perú, 76 (1). pp. 54-60. ISSN 1810-634X http://www.scielo.org.pe/scielo.php?script=sci_arttext&pid=S1810-634X2010000100006
spellingShingle Kassim, Anuar
Nagalingam, Saravanan
Tan, Wee Tee
Ho, Soon Min
Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films
title Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films
title_full Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films
title_fullStr Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films
title_full_unstemmed Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films
title_short Effects of deposition period on the chemical bath deposited Cu4SnS4 thin films
title_sort effects of deposition period on the chemical bath deposited cu4sns4 thin films
url http://psasir.upm.edu.my/id/eprint/14360/
http://psasir.upm.edu.my/id/eprint/14360/
http://psasir.upm.edu.my/id/eprint/14360/1/Effects%20of%20deposition%20period%20on%20the%20chemical%20bath%20deposited%20Cu4SnS4%20thin%20films.pdf