Development of dielectric material, CaCu3Ti4O12

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Development of dielectric material, CaCu3Ti4O12

CaCu3Ti4O12 (CCTO) was prepared by a conventional solid state reaction method. CCTO sample was pre-sintered at 900°C for 10 hours and sintered at 1075°C for 12 hours. The dielectric properties of the sample were measured using HP 4192A LF Impedance Analyzer. The complex permittivity was measured wit...

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Bibliographic Details
Main Authors:	Wong, Swee Yin, Hassan, Jumiah, Hashim, Mansor, See, Alex
Format:	Article
Language:	English
Published:	Malaysian Solid State Science and Technology Society 2008
Online Access:	http://psasir.upm.edu.my/id/eprint/14014/ http://psasir.upm.edu.my/id/eprint/14014/1/Development%20of%20dielectric%20material%2C%20CaCu3Ti4O12.pdf

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