Development of dielectric material, CaCu3Ti4O12

CaCu3Ti4O12 (CCTO) was prepared by a conventional solid state reaction method. CCTO sample was pre-sintered at 900°C for 10 hours and sintered at 1075°C for 12 hours. The dielectric properties of the sample were measured using HP 4192A LF Impedance Analyzer. The complex permittivity was measured wit...

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Main Authors: Wong, Swee Yin, Hassan, Jumiah, Hashim, Mansor, See, Alex
Format: Article
Language:English
Published: Malaysian Solid State Science and Technology Society 2008
Online Access:http://psasir.upm.edu.my/id/eprint/14014/
http://psasir.upm.edu.my/id/eprint/14014/1/Development%20of%20dielectric%20material%2C%20CaCu3Ti4O12.pdf
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author Wong, Swee Yin
Hassan, Jumiah
Hashim, Mansor
See, Alex
author_facet Wong, Swee Yin
Hassan, Jumiah
Hashim, Mansor
See, Alex
author_sort Wong, Swee Yin
building UPM Institutional Repository
collection Online Access
description CaCu3Ti4O12 (CCTO) was prepared by a conventional solid state reaction method. CCTO sample was pre-sintered at 900°C for 10 hours and sintered at 1075°C for 12 hours. The dielectric properties of the sample were measured using HP 4192A LF Impedance Analyzer. The complex permittivity was measured within the frequency range from 10 Hz to 106 Hz and the temperature ranging from 30°C to 400°C. The results showed that the dielectric constant and dielectric loss factor of the sample are frequency dependent and temperature dependent. CCTO sample exhibits a high dielectric constant which is around 105. Dielectric constant increases with decreasing frequency due to interfacial polarization. This could be explained by the Maxwell- Wagner effect.
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publisher Malaysian Solid State Science and Technology Society
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spelling upm-140142018-09-04T07:57:31Z http://psasir.upm.edu.my/id/eprint/14014/ Development of dielectric material, CaCu3Ti4O12 Wong, Swee Yin Hassan, Jumiah Hashim, Mansor See, Alex CaCu3Ti4O12 (CCTO) was prepared by a conventional solid state reaction method. CCTO sample was pre-sintered at 900°C for 10 hours and sintered at 1075°C for 12 hours. The dielectric properties of the sample were measured using HP 4192A LF Impedance Analyzer. The complex permittivity was measured within the frequency range from 10 Hz to 106 Hz and the temperature ranging from 30°C to 400°C. The results showed that the dielectric constant and dielectric loss factor of the sample are frequency dependent and temperature dependent. CCTO sample exhibits a high dielectric constant which is around 105. Dielectric constant increases with decreasing frequency due to interfacial polarization. This could be explained by the Maxwell- Wagner effect. Malaysian Solid State Science and Technology Society 2008 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/14014/1/Development%20of%20dielectric%20material%2C%20CaCu3Ti4O12.pdf Wong, Swee Yin and Hassan, Jumiah and Hashim, Mansor and See, Alex (2008) Development of dielectric material, CaCu3Ti4O12. Solid State Science and Technology, 16 (1). pp. 215-221. ISSN 0128-7389 http://journal.masshp.net/volume-16-no-1-2008/
spellingShingle Wong, Swee Yin
Hassan, Jumiah
Hashim, Mansor
See, Alex
Development of dielectric material, CaCu3Ti4O12
title Development of dielectric material, CaCu3Ti4O12
title_full Development of dielectric material, CaCu3Ti4O12
title_fullStr Development of dielectric material, CaCu3Ti4O12
title_full_unstemmed Development of dielectric material, CaCu3Ti4O12
title_short Development of dielectric material, CaCu3Ti4O12
title_sort development of dielectric material, cacu3ti4o12
url http://psasir.upm.edu.my/id/eprint/14014/
http://psasir.upm.edu.my/id/eprint/14014/
http://psasir.upm.edu.my/id/eprint/14014/1/Development%20of%20dielectric%20material%2C%20CaCu3Ti4O12.pdf