Doping mechanisms and electrical properties of bismuth tantalate fluorites

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Doping mechanisms and electrical properties of bismuth tantalate fluorites

Phase-pure bismuth tantalate fluorites were successfully prepared via conventional solid-state method at 900 °C in 24–48 h. The subsolidus solution was proposed with the general formula of Bi3+x Ta1−x O7−x (0 ≤ x ≤ 0.184), wherein the formation mechanism involved a one-to-one replacement of Ta5+ cat...

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Bibliographic Details
Main Authors:	Firman, Kartika, Tan, Kar Ban, Khaw, Chwin Chieh, Zainal, Zulkarnain, Tan, Yen Ping, Chen, Soo Kien
Format:	Article
Language:	English
Published:	Springer 2017
Online Access:	http://psasir.upm.edu.my/id/eprint/13435/ http://psasir.upm.edu.my/id/eprint/13435/1/Doping%20mechanisms%20and%20electrical%20properties%20of%20bismuth%20tantalate%20fluorites.pdf

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