ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell

Two-dimensional (2D) metal dichalcogenides such as tin sulfide (SnS) are gaining considerable research interest in photoelectrochemical (PEC) cell applications. However, challenges remain in chemically producing a p-n SnS/ZnO heterojunction where the SnS photosensitizing layer at sufficient low band...

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Main Authors: Tan, Huey Jing, Zainal, Zulkarnain, Talib, Zainal Abidin, Lim, Hong Ngee, Shafie, Suhaidi, Tan, Sin Tee, Bahrudin, Noor Nazihah
Format: Article
Language:English
English
Published: Elsevier 2025
Online Access:http://psasir.upm.edu.my/id/eprint/116665/
http://psasir.upm.edu.my/id/eprint/116665/1/116665.pdf
http://psasir.upm.edu.my/id/eprint/116665/3/116665.pdf
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author Tan, Huey Jing
Zainal, Zulkarnain
Talib, Zainal Abidin
Lim, Hong Ngee
Shafie, Suhaidi
Tan, Sin Tee
Bahrudin, Noor Nazihah
author_facet Tan, Huey Jing
Zainal, Zulkarnain
Talib, Zainal Abidin
Lim, Hong Ngee
Shafie, Suhaidi
Tan, Sin Tee
Bahrudin, Noor Nazihah
author_sort Tan, Huey Jing
building UPM Institutional Repository
collection Online Access
description Two-dimensional (2D) metal dichalcogenides such as tin sulfide (SnS) are gaining considerable research interest in photoelectrochemical (PEC) cell applications. However, challenges remain in chemically producing a p-n SnS/ZnO heterojunction where the SnS photosensitizing layer at sufficient low band gap energy can be deposited without damaging the ZnO part. In this study, SnS-sensitized ZnO nanorods (NRs) thin films were prepared using facile hydrothermal and successive ionic layer adsorption and reaction (SILAR) methods. It is demonstrated that the phase, morphology, and orientation of a SILAR deposited SnS thin film are strongly determined by the combined effect of film thickness and annealing temperature. At low SILAR cycle number, the polycrystalline SnS thin films have mainly occurred in orthorhombic phase based on the X-ray diffraction (XRD) analysis. Increasing the SILAR cycle generates also cubic π-SnS which is later quenched by high-temperature thermal treatment. Field-emission scanning electron microscopy (FESEM) shows the change in grain size and SnS distribution on the surface of ZnO NRs at different film thickness and annealing temperatures, which in turn affected the optical and photoelectrochemical properties of SnS/ZnO heterojunctions. Ultraviolet-visible (UV–Vis) spectroscopy, photoluminescence (PL) spectroscopy and linear sweep voltammetry (LSV) studies confirmed the improved visible incident photons harvesting and a lower carrier recombination after the construction of p-n SnS/ZnO heterostructures. As compared to the pristine ZnO photoelectrode that displays a low conversion efficiency (η) of 0.40 %, the optimized SnS/ZnO NRs sample exhibited a maximum η of 1.33 % at +0.2 V (vs. Ag/AgCl).
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institution Universiti Putra Malaysia
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language English
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spelling upm-1166652025-07-07T09:15:40Z http://psasir.upm.edu.my/id/eprint/116665/ ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell Tan, Huey Jing Zainal, Zulkarnain Talib, Zainal Abidin Lim, Hong Ngee Shafie, Suhaidi Tan, Sin Tee Bahrudin, Noor Nazihah Two-dimensional (2D) metal dichalcogenides such as tin sulfide (SnS) are gaining considerable research interest in photoelectrochemical (PEC) cell applications. However, challenges remain in chemically producing a p-n SnS/ZnO heterojunction where the SnS photosensitizing layer at sufficient low band gap energy can be deposited without damaging the ZnO part. In this study, SnS-sensitized ZnO nanorods (NRs) thin films were prepared using facile hydrothermal and successive ionic layer adsorption and reaction (SILAR) methods. It is demonstrated that the phase, morphology, and orientation of a SILAR deposited SnS thin film are strongly determined by the combined effect of film thickness and annealing temperature. At low SILAR cycle number, the polycrystalline SnS thin films have mainly occurred in orthorhombic phase based on the X-ray diffraction (XRD) analysis. Increasing the SILAR cycle generates also cubic π-SnS which is later quenched by high-temperature thermal treatment. Field-emission scanning electron microscopy (FESEM) shows the change in grain size and SnS distribution on the surface of ZnO NRs at different film thickness and annealing temperatures, which in turn affected the optical and photoelectrochemical properties of SnS/ZnO heterojunctions. Ultraviolet-visible (UV–Vis) spectroscopy, photoluminescence (PL) spectroscopy and linear sweep voltammetry (LSV) studies confirmed the improved visible incident photons harvesting and a lower carrier recombination after the construction of p-n SnS/ZnO heterostructures. As compared to the pristine ZnO photoelectrode that displays a low conversion efficiency (η) of 0.40 %, the optimized SnS/ZnO NRs sample exhibited a maximum η of 1.33 % at +0.2 V (vs. Ag/AgCl). Elsevier 2025 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/116665/1/116665.pdf text en http://psasir.upm.edu.my/id/eprint/116665/3/116665.pdf Tan, Huey Jing and Zainal, Zulkarnain and Talib, Zainal Abidin and Lim, Hong Ngee and Shafie, Suhaidi and Tan, Sin Tee and Bahrudin, Noor Nazihah (2025) ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell. Applied Materials Today, 42. art. no. 102581. pp. 1-10. ISSN 2352-9407; eISSN: 2352-9415 https://linkinghub.elsevier.com/retrieve/pii/S2352940724005262 10.1016/j.apmt.2024.102581
spellingShingle Tan, Huey Jing
Zainal, Zulkarnain
Talib, Zainal Abidin
Lim, Hong Ngee
Shafie, Suhaidi
Tan, Sin Tee
Bahrudin, Noor Nazihah
ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell
title ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell
title_full ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell
title_fullStr ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell
title_full_unstemmed ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell
title_short ZnO nanorods anchored SnS through successive ionic layer adsorption and reaction (SILAR) approach for enhanced performance photoelectrochemical cell
title_sort zno nanorods anchored sns through successive ionic layer adsorption and reaction (silar) approach for enhanced performance photoelectrochemical cell
url http://psasir.upm.edu.my/id/eprint/116665/
http://psasir.upm.edu.my/id/eprint/116665/
http://psasir.upm.edu.my/id/eprint/116665/
http://psasir.upm.edu.my/id/eprint/116665/1/116665.pdf
http://psasir.upm.edu.my/id/eprint/116665/3/116665.pdf