APA (7th ed.) Citation

Yu, T., Li, J., Lei, W., Shafe, S., Mohtar, M. N., Jindapetch, N., . . . Zhao, Z. (2024). The resistance switching performance of the memristor improved effectively by inserting carbon quantum dots (CQDs) for digital information processing. Tsinghua University Press.

Chicago Style (17th ed.) Citation

Yu, Tianqi, Jie Li, Wei Lei, Suhaidi Shafe, Mohd Nazim Mohtar, Nattha Jindapetch, Paphavee van Dommelen, and Zhiwei Zhao. The Resistance Switching Performance of the Memristor Improved Effectively by Inserting Carbon Quantum Dots (CQDs) for Digital Information Processing. Tsinghua University Press, 2024.

MLA (9th ed.) Citation

Yu, Tianqi, et al. The Resistance Switching Performance of the Memristor Improved Effectively by Inserting Carbon Quantum Dots (CQDs) for Digital Information Processing. Tsinghua University Press, 2024.