A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology
This paper proposes an analog-to-digital converter (ADC) based on a low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) process. A Voltage Controlled Oscillator (VCO)-based structure is employed to tolerate the process uncertainty. A key challenge in VCO-based ADCs is the non-l...
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| Format: | Article |
| Language: | English |
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Institute of Electrical and Electronics Engineers
2024
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| Online Access: | http://psasir.upm.edu.my/id/eprint/114694/ http://psasir.upm.edu.my/id/eprint/114694/1/114694.pdf |
| _version_ | 1848866568292794368 |
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| author | Lou, Yuqing Zhang, Hanbo Li, Jun Lin, Chen Shao, Leilai Guo, Xiaojun Li, Yongfu Wang, Guoxing Rokhani, Fakhrul Zhao, Jian |
| author_facet | Lou, Yuqing Zhang, Hanbo Li, Jun Lin, Chen Shao, Leilai Guo, Xiaojun Li, Yongfu Wang, Guoxing Rokhani, Fakhrul Zhao, Jian |
| author_sort | Lou, Yuqing |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | This paper proposes an analog-to-digital converter (ADC) based on a low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) process. A Voltage Controlled Oscillator (VCO)-based structure is employed to tolerate the process uncertainty. A key challenge in VCO-based ADCs is the non-linearity issue of the VCO. To address this, this paper presents a pseudo-differential architecture with resistive input stage, which significantly suppresses the 2nd and 3rd harmonics and thus improves the linearity. The proposed ADC is fabricated using a 3-μm mass-production LTPS process. It achieves a 10.23-bit ENOB at 1 kS/s and 8.22-bit ENOB at 16 kS/s. The FOMW of this work is 24× better than the state-of-the-art ADCs in IGZO technology and 2× better than the best simulation result in LTPS technology. Under extreme PVT variations, proposed ADC can still maintain minor performance changes. We also demonstrate the successful acquisition and reconstruction of ECG signal. |
| first_indexed | 2025-11-15T14:22:40Z |
| format | Article |
| id | upm-114694 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T14:22:40Z |
| publishDate | 2024 |
| publisher | Institute of Electrical and Electronics Engineers |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-1146942025-02-26T08:16:56Z http://psasir.upm.edu.my/id/eprint/114694/ A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology Lou, Yuqing Zhang, Hanbo Li, Jun Lin, Chen Shao, Leilai Guo, Xiaojun Li, Yongfu Wang, Guoxing Rokhani, Fakhrul Zhao, Jian This paper proposes an analog-to-digital converter (ADC) based on a low-temperature polycrystalline silicon (LTPS) thin film transistor (TFT) process. A Voltage Controlled Oscillator (VCO)-based structure is employed to tolerate the process uncertainty. A key challenge in VCO-based ADCs is the non-linearity issue of the VCO. To address this, this paper presents a pseudo-differential architecture with resistive input stage, which significantly suppresses the 2nd and 3rd harmonics and thus improves the linearity. The proposed ADC is fabricated using a 3-μm mass-production LTPS process. It achieves a 10.23-bit ENOB at 1 kS/s and 8.22-bit ENOB at 16 kS/s. The FOMW of this work is 24× better than the state-of-the-art ADCs in IGZO technology and 2× better than the best simulation result in LTPS technology. Under extreme PVT variations, proposed ADC can still maintain minor performance changes. We also demonstrate the successful acquisition and reconstruction of ECG signal. Institute of Electrical and Electronics Engineers 2024-03 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/114694/1/114694.pdf Lou, Yuqing and Zhang, Hanbo and Li, Jun and Lin, Chen and Shao, Leilai and Guo, Xiaojun and Li, Yongfu and Wang, Guoxing and Rokhani, Fakhrul and Zhao, Jian (2024) A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology. IEEE Transactions on Circuits and Systems II: Express Briefs, 10 (10). ISSN 1549-7747; eISSN: 1558-3791 https://ieeexplore.ieee.org/document/10681527/ 10.1109/TCSII.2024.3462819 |
| spellingShingle | Lou, Yuqing Zhang, Hanbo Li, Jun Lin, Chen Shao, Leilai Guo, Xiaojun Li, Yongfu Wang, Guoxing Rokhani, Fakhrul Zhao, Jian A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology |
| title | A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology |
| title_full | A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology |
| title_fullStr | A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology |
| title_full_unstemmed | A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology |
| title_short | A 10.23-bit ENOB 1 KS/S differential VCO-based ADC with resistive input stage in low-temperature poly-silicon TFT technology |
| title_sort | 10.23-bit enob 1 ks/s differential vco-based adc with resistive input stage in low-temperature poly-silicon tft technology |
| url | http://psasir.upm.edu.my/id/eprint/114694/ http://psasir.upm.edu.my/id/eprint/114694/ http://psasir.upm.edu.my/id/eprint/114694/ http://psasir.upm.edu.my/id/eprint/114694/1/114694.pdf |