APA (7th ed.) Citation

Ji, Y., Zhang, Y., Chen, C., Zhao, J., Rokhani, F. Z., Ismail, Y., & Li, Y. (2024). A 0.4 V, 12.2 pW leakage, 36.5 fJ/step switching efficiency data retention flip-flop in 22 nm FDSOI. Institute of Electrical and Electronics Engineers.

Chicago Style (17th ed.) Citation

Ji, Yuxin, Yuhang Zhang, Changyan Chen, Jian Zhao, Fakhrul Zaman Rokhani, Yehea Ismail, and Yongfu Li. A 0.4 V, 12.2 PW Leakage, 36.5 FJ/step Switching Efficiency Data Retention Flip-flop in 22 Nm FDSOI. Institute of Electrical and Electronics Engineers, 2024.

MLA (9th ed.) Citation

Ji, Yuxin, et al. A 0.4 V, 12.2 PW Leakage, 36.5 FJ/step Switching Efficiency Data Retention Flip-flop in 22 Nm FDSOI. Institute of Electrical and Electronics Engineers, 2024.