The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process
The resistive RAM (RRAM) based in-memory computation is a promising technology to overcome the Von-Neumann bottleneck to provide fast and efficient computation. The RRAM is the most appropriate choice for cryptographic applications like encryption/decryption in which the data is computed and stored...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Elsevier
2024
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| Online Access: | http://psasir.upm.edu.my/id/eprint/113240/ http://psasir.upm.edu.my/id/eprint/113240/1/113240.pdf |
| _version_ | 1848866168440356864 |
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| author | Nivetha, T. Bindu, B. Kamsani, Noor Ain |
| author_facet | Nivetha, T. Bindu, B. Kamsani, Noor Ain |
| author_sort | Nivetha, T. |
| building | UPM Institutional Repository |
| collection | Online Access |
| description | The resistive RAM (RRAM) based in-memory computation is a promising technology to overcome the Von-Neumann bottleneck to provide fast and efficient computation. The RRAM is the most appropriate choice for cryptographic applications like encryption/decryption in which the data is computed and stored in the memory itself which enhances the security. The variability issue of RRAM namely switching or device parameter variations and cycle-to-cycle variations deteriorates the functionality of RRAM based circuits. In this paper, the XOR gate with V/R-R logic and a 4-bit encryption/decryption process are implemented using the RRAM Stanford model integrated in the Cadence circuit simulator. The output voltage variations of XOR gate and the encryption/decryption by varying switching and cycle-to-cycle parameters are analyzed. The range of switching parameters of the model that provides the accurate outputs of XOR gate and encryption/decryption is determined. |
| first_indexed | 2025-11-15T14:16:19Z |
| format | Article |
| id | upm-113240 |
| institution | Universiti Putra Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T14:16:19Z |
| publishDate | 2024 |
| publisher | Elsevier |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | upm-1132402024-11-18T07:18:10Z http://psasir.upm.edu.my/id/eprint/113240/ The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process Nivetha, T. Bindu, B. Kamsani, Noor Ain The resistive RAM (RRAM) based in-memory computation is a promising technology to overcome the Von-Neumann bottleneck to provide fast and efficient computation. The RRAM is the most appropriate choice for cryptographic applications like encryption/decryption in which the data is computed and stored in the memory itself which enhances the security. The variability issue of RRAM namely switching or device parameter variations and cycle-to-cycle variations deteriorates the functionality of RRAM based circuits. In this paper, the XOR gate with V/R-R logic and a 4-bit encryption/decryption process are implemented using the RRAM Stanford model integrated in the Cadence circuit simulator. The output voltage variations of XOR gate and the encryption/decryption by varying switching and cycle-to-cycle parameters are analyzed. The range of switching parameters of the model that provides the accurate outputs of XOR gate and encryption/decryption is determined. Elsevier 2024-10 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/113240/1/113240.pdf Nivetha, T. and Bindu, B. and Kamsani, Noor Ain (2024) The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process. Microelectronic Engineering, 293. art. no. 112244. pp. 1-13. ISSN 0167-9317 https://www.sciencedirect.com/science/article/pii/S0167931724001138 10.1016/j.mee.2024.112244 |
| spellingShingle | Nivetha, T. Bindu, B. Kamsani, Noor Ain The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process |
| title | The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process |
| title_full | The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process |
| title_fullStr | The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process |
| title_full_unstemmed | The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process |
| title_short | The effect of switching and cycle-to-cycle variations of RRAM on 4-bit encryption/decryption process |
| title_sort | effect of switching and cycle-to-cycle variations of rram on 4-bit encryption/decryption process |
| url | http://psasir.upm.edu.my/id/eprint/113240/ http://psasir.upm.edu.my/id/eprint/113240/ http://psasir.upm.edu.my/id/eprint/113240/ http://psasir.upm.edu.my/id/eprint/113240/1/113240.pdf |