Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties

The location of Ge-doped Bi4V2O11 solid solutions in the Bi2O3-V2O5-GeO 2 ternary phase diagram has been determined; a more detailed study of the Bi4V2O11-Bi2GeO5 join has been carried out and the phase diagram presented. The main mechanisms for solid solution formation appear to involve substitutio...

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Main Authors: Lee, Chnoong Kheng, Tan, Meow Peng, West, Anthony R.
Format: Article
Language:English
Published: Royal Society of Chemistry (RSC) 1994
Online Access:http://psasir.upm.edu.my/id/eprint/112928/
http://psasir.upm.edu.my/id/eprint/112928/1/112928.pdf
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author Lee, Chnoong Kheng
Tan, Meow Peng
West, Anthony R.
author_facet Lee, Chnoong Kheng
Tan, Meow Peng
West, Anthony R.
author_sort Lee, Chnoong Kheng
building UPM Institutional Repository
collection Online Access
description The location of Ge-doped Bi4V2O11 solid solutions in the Bi2O3-V2O5-GeO 2 ternary phase diagram has been determined; a more detailed study of the Bi4V2O11-Bi2GeO5 join has been carried out and the phase diagram presented. The main mechanisms for solid solution formation appear to involve substitution of both Ge and Bi into V sites, giving rise to the general formula Bi4+yV 2-2x-yGe2xO11-x-y: -0.04<y<0.23; 0<x<0.45 (not all values of x and y in these ranges). Conductivity of the α and γ polymorphs both on and off the Bi4V 2O11-Bi2GeO5 join generally decreases with increasing x after an initial increase. In addition, conductivity of the γ polymorph decreases with increasing Bi2O3 content, y; the highest conductivity was obtained at x = 0.305 and y = 0.07.
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spelling upm-1129282025-01-27T06:57:55Z http://psasir.upm.edu.my/id/eprint/112928/ Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties Lee, Chnoong Kheng Tan, Meow Peng West, Anthony R. The location of Ge-doped Bi4V2O11 solid solutions in the Bi2O3-V2O5-GeO 2 ternary phase diagram has been determined; a more detailed study of the Bi4V2O11-Bi2GeO5 join has been carried out and the phase diagram presented. The main mechanisms for solid solution formation appear to involve substitution of both Ge and Bi into V sites, giving rise to the general formula Bi4+yV 2-2x-yGe2xO11-x-y: -0.04<y<0.23; 0<x<0.45 (not all values of x and y in these ranges). Conductivity of the α and γ polymorphs both on and off the Bi4V 2O11-Bi2GeO5 join generally decreases with increasing x after an initial increase. In addition, conductivity of the γ polymorph decreases with increasing Bi2O3 content, y; the highest conductivity was obtained at x = 0.305 and y = 0.07. Royal Society of Chemistry (RSC) 1994 Article PeerReviewed text en http://psasir.upm.edu.my/id/eprint/112928/1/112928.pdf Lee, Chnoong Kheng and Tan, Meow Peng and West, Anthony R. (1994) Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties. Journal of Materials Chemistry, 4 (4). pp. 525-528. ISSN 0959-9428; eISSN: 1364-5501 https://pubs.rsc.org/en/content/articlelanding/1994/jm/jm9940400525 10.1039/jm9940400525
spellingShingle Lee, Chnoong Kheng
Tan, Meow Peng
West, Anthony R.
Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
title Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
title_full Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
title_fullStr Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
title_full_unstemmed Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
title_short Ge-Doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
title_sort ge-doped bismuth vanadate solid electrolytes: synthesis, phase diagram and electrical properties
url http://psasir.upm.edu.my/id/eprint/112928/
http://psasir.upm.edu.my/id/eprint/112928/
http://psasir.upm.edu.my/id/eprint/112928/
http://psasir.upm.edu.my/id/eprint/112928/1/112928.pdf