Modelling and Simulation of Si/SiGe Heterostructure Devices

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Modelling and Simulation of Si/SiGe Heterostructure Devices

Complementary metal-oxide-semiconductor (CMOS) is currently the most dominant technology used in making integrated systems. It consists of both n-channel MOS transistor (NMOS) and p-channel MOS transistor (PMOS) fabricated on the same substrate. Conventionally, the substrate is made of silicon. A...

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Bibliographic Details
Main Author:	Abd. Rasheid, Norulhuda
Format:	Thesis
Language:	English English
Published:	2002
Subjects:	Heterostructures Metal oxide semiconductors
Online Access:	http://psasir.upm.edu.my/id/eprint/10622/ http://psasir.upm.edu.my/id/eprint/10622/1/FK_2002_16.pdf

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