Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization

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Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization

The escalating demands in energy conversion necessitate the evolution of efficient power electronic devices beyond the limitations of traditional silicon (Si) counterparts. This research delves into the intricacies of the Enhancement mode Gallium Nitride High Electron Mobility Transistor (E-mode GaN...

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Bibliographic Details
Main Authors:	Liu, Xinzhi, Shafie, Suhaidi, Radzi, Mohd Amran Mohd, Azis, Norhafiz, Karim, Abdul Hafiz Abdul
Format:	Article
Published:	Elsevier Ltd 2024
Online Access:	http://psasir.upm.edu.my/id/eprint/105834/

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